公开(公告)号：US20130334054A1

公开(公告)日：2013-12-19

申请号：US13916817

申请日：2013-06-13

申请人： Commissariat A L'Energie Atomique Et Aux Energie Alternatives

发明人： Cyril CHAPPAZ GILLOT ,  Solenn BERSON ,  Valentina IVANOVA ,  Raul SALAZAR ROMERO

IPC分类号： H01L21/48

CPC分类号： H01L21/4885 ,  C25D3/38 ,  C25D9/08

摘要： A method for forming, on a conductive or semiconductor substrate, nanowires based on CuSCN, including the steps of: preparing an aqueous electrolytic solution from a Cu(II) salt having a concentration lower than 120 mM, a Cu(II) complexing agent from the aminocarboxylic acid family, and a thiocyanate salt, the solution having a pH ranging between 0.1 and 3; electrochemically depositing the aqueous electrolytic solution on the substrate.

摘要翻译： 一种在导电或半导体衬底上形成基于CuSCN的纳米线的方法，包括以下步骤：从浓度低于120mM的Cu（II）盐制备电解质水溶液，制备Cu（II）络合剂， 氨基羧酸系和硫氰酸盐，该溶液的pH范围在0.1和3之间; 在基材上电化学沉积含水电解液。