-
公开(公告)号:US11810789B2
公开(公告)日:2023-11-07
申请号:US16709993
申请日:2019-12-11
IPC分类号: H01L21/308 , H01L21/02 , H01L21/8234
CPC分类号: H01L21/3083 , H01L21/0245 , H01L21/02249 , H01L21/3081 , H01L21/8234
摘要: A method for producing a semiconductor substrate is provided, including: producing a superficial layer arranged on a buried dielectric layer and including a strained semiconductor region; producing an etching mask on the superficial layer, covering a part of the region; etching the superficial layer to a pattern of the mask, exposing a first lateral edge of a first strained semiconductor portion belonging to the part and contacting the dielectric layer; forming a mechanical barrier from a second portion of material belonging to the first portion, the second portion having a bottom surface contacting the dielectric layer and an upper surface contacting the mask, the barrier arranged against the part and bearing mechanically against the second portion, and removing the mask.
-
公开(公告)号:US10884379B2
公开(公告)日:2021-01-05
申请号:US16196365
申请日:2018-11-20
发明人: Victor Boureau , David Cooper
IPC分类号: H01J37/22 , H01J37/26 , G03H5/00 , H01J37/295 , G03H1/04
摘要: Method for acquisition of at least one hologram of a sample by off-axis holography using a transmission electron microscope, the microscope comprising an electron beam source, at least one objective lens, a sample holder, at electron biprism and means of displacing the electron beam in precession mode upstream from the sample holder and a compensator of the precession downstream from the sample holder, said method comprising the activation of means of displacing the electron beam in precession mode and the compensator and acquisition of a hologram of said sample in precession mode.
-