Interface engineered high-Tc Josephson junctions
    1.
    发明申请
    Interface engineered high-Tc Josephson junctions 审中-公开
    接口工程高Tc约瑟夫逊结

    公开(公告)号:US20040134967A1

    公开(公告)日:2004-07-15

    申请号:US10704215

    申请日:2003-11-06

    CPC classification number: H01L39/2496

    Abstract: A process is provided for fabricating YBa2Cu3O7 thin-film edge junctions in which no deposited barrier is employed. These devices display excellent RSJ-type I-V characteristics with values of Ic and Rn tunable over a useful range for operation of digital circuits.

    Abstract translation: 提供了一种用于制造其中不使用沉积的屏障的YBa2Cu3O7薄膜边缘结的方法。 这些器件显示出良好的RSJ型I-V特性,Ic和Rn的值可在数字电路的有用范围内进行调节。

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