公开(公告)号：US20140154439A1

公开(公告)日：2014-06-05

申请号：US14091607

申请日：2013-11-27

Applicant: Corning Incorporated

Inventor： Steven Edward DeMartino ,  Thomas Helmut Elmer ,  Alexander Usenko

IPC: C03C23/00 ,  C03C21/00

CPC classification number: C03C23/008 ,  C03C21/006 ,  C03C23/0095 ,  Y10T428/131 ,  Y10T428/315

Abstract: Methods include providing a glass, wherein the glass is capable of being phase separated; phase separating the glass; leaching at least one surface of the glass to form a leached glass surface layer; and replenishing the leached glass surface layer with constituents to form a replenished glass surface layer, wherein the constituents cause swelling of the replenished glass surface layer.

Abstract translation: 方法包括提供玻璃，其中玻璃能够相分离; 相分离玻璃; 浸出玻璃的至少一个表面以形成浸出的玻璃表面层; 并且用成分补充浸出的玻璃表面层以形成补充的玻璃表面层，其中所述成分引起补充的玻璃表面层的溶胀。

公开(公告)号：US08772875B2

公开(公告)日：2014-07-08

申请号：US13973562

申请日：2013-08-22

Applicant: Corning Incorporated

Inventor： Nadia Ben Mohamed ,  Ta-ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alexander Usenko

IPC: H01L29/786

CPC classification number: H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract translation: 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

公开(公告)号：US20130341756A1

公开(公告)日：2013-12-26

申请号：US13973562

申请日：2013-08-22

Applicant: CORNING INCORPORATED

Inventor： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alexander Usenko

IPC: H01L29/02

CPC classification number: H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.