Abstract:
Laminated structures comprise a metal sheet including a first face and a second face with a thickness of from about 0.5 mm to about 2 mm extending between the first face and the second face. The laminated structure further includes a first chemically strengthened glass sheet including a thickness of less than or equal to about 1.1 mm and a first interlayer attaching the first chemically strengthened glass sheet to the first face of the metal sheet. In further examples, methods of manufacturing a laminated structure comprise the steps of laminating with a metal sheet and a first chemically strengthened glass sheet together with an interlayer.
Abstract:
Laminated structures comprise a metal sheet including a first face and a second face with a thickness of from about 0.5 mm to about 2 mm extending between the first face and the second face. The laminated structure further includes a first chemically strengthened glass sheet including a thickness of less than or equal to about 1.1 mm and a first interlayer attaching the first chemically strengthened glass sheet to the first face of the metal sheet. In further examples, methods of manufacturing a laminated structure comprise the steps of laminating with a metal sheet and a first chemically strengthened glass sheet together with an interlayer.
Abstract:
A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO2+B2O3+Al2O3≥86.5 mol. %. and R2O—RO—Al2O3
Abstract:
A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO2+B2O3+Al2O3≧86.5 mol. %. and R2O—RO—Al2O3
Abstract translation:一种玻璃层压结构,其包括外部玻璃板和内部玻璃板,其中一个或两个所述玻璃板包括SiO 2 + B 2 O 3 + Al 2 O 3≥86.5mol。 %。 和R2O-RO-Al2O3 <约5mol。 %。 示例性玻璃板可以包含约69-80mol。 %SiO 2,约6-12mol。 %Al 2 O 3,约2-10mol。 %B 2 O 3,约0-5mol。 %ZrO 2,Li 2 O,MgO,ZnO和P 2 O 5,约6-15mol。 %Na 2 O,约0-3mol。 %K2O和CaO,以及约0-2mol之间。 %SnO2,提供机械坚固耐用的结构。
Abstract:
A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
Abstract:
A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.