公开(公告)号：US06630360B2

公开(公告)日：2003-10-07

申请号：US10044641

申请日：2002-01-10

申请人： Craig William Christian ,  James Clayton Stice

发明人： Craig William Christian ,  James Clayton Stice

IPC分类号： H01L2100

CPC分类号： H01L21/76843 ,  H01L21/7684 ,  H01L21/76873 ,  H01L21/76877 ,  H01L22/20 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.

摘要翻译： 提供了一种方法，其包括在工件上形成铜籽晶层并测量工件上铜籽晶层的均匀性。 该方法还包括应用均匀度测量以修改处理以形成具有期望的均匀度分布的铜层，以在随后的平坦化中增加平坦化。

公开(公告)号：US06332973B1

公开(公告)日：2001-12-25

申请号：US09490465

申请日：2000-01-25

申请人： James Clayton Stice

发明人： James Clayton Stice

IPC分类号： C25C112

CPC分类号： H01L21/30

摘要： CMOS processing is enhanced via a method and system that use a chemical bath purification process. According to an example embodiment of the present invention, solution from a CMOS wet chemical bath is passed over a powered circuit. The powered circuit plates out copper from the solution, and the solution is then returned to the bath. By removing copper from the chemical bath in this manner, cross-contamination of wet chemical equipment is reduced, and the need for redundant tool sets can be eliminated.

摘要翻译： 通过使用化学浴净化过程的方法和系统来增强CMOS处理。 根据本发明的示例性实施例，来自CMOS湿式化学浴液的溶液通过电源电路。 电源电路从溶液中排出铜，然后将溶液返回到浴中。 通过以这种方式从化学浴中除去铜，减少了湿化学设备的交叉污染，可以消除对冗余工具组的需要。