公开(公告)号：US20220189768A1

公开(公告)日：2022-06-16

申请号：US17121863

申请日：2020-12-15

Applicant: Cree, Inc.

Inventor： Yuri Khlebnikov ,  Varad R. Sakhalkar ,  Caleb A. Kent ,  Valeri F. Tsvetkov ,  Michael J. Paisley ,  Oleksandr Kramarenko ,  Matthew David Conrad ,  Eugene Deyneka ,  Steven Griffiths ,  Simon Bubel ,  Adrian R. Powell ,  Robert Tyler Leonard ,  Elif Balkas ,  Curt Progl ,  Michael Fusco ,  Alexander Shveyd ,  Kathy Doverspike ,  Lukas Nattermann

IPC: H01L21/02 ,  C30B29/36

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.