公开(公告)号：US08772792B2

公开(公告)日：2014-07-08

申请号：US13974505

申请日：2013-08-23

Applicant: Cree, Inc.

Inventor： Steven P. DenBaars ,  Shuji Nakamura ,  Max Batres

IPC: H01L27/15

CPC classification number: H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.

Abstract translation: 具有p型层的具有相关联的p型接触的LED，具有相关联的n型接触的n型材料层和p型层与n型层之间的有源区的LED包括粗糙化层 发光侧表面进一步增强光提取。

公开(公告)号：US20130341663A1

公开(公告)日：2013-12-26

申请号：US13974505

申请日：2013-08-23

Applicant: Cree, Inc.

Inventor： Steven P. DenBaars ,  Shuji Nakamura ,  Max Batres

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction.

Abstract translation: 具有p型层的具有相关联的p型接触的LED，具有相关联的n型接触的n型材料层和p型层与n型层之间的有源区的LED包括粗糙化层 发光侧表面进一步增强光提取。