公开(公告)号：US12284818B2

公开(公告)日：2025-04-22

申请号：US17594636

申请日：2020-04-28

Applicant: DALIAN UNIVERSITY OF TECHNOLOGY

Inventor： Huolin Huang ,  Zhonghao Sun

IPC: H10D30/47 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/76 ,  H01L21/765 ,  H10D30/01 ,  H10D62/824 ,  H10D62/85 ,  H10D64/00

Abstract: A high-threshold-voltage normally-off high-electron-mobility transistor (HEMT) includes a nucleation layer and an epitaxial layer are grown sequentially on a substrate; a barrier layer, a source, and a drain above the epitaxial layer; the barrier layer and the epitaxial layer form a heterojunction structure, and the contact interface therebetween is induced by polarization charges to generate two-dimensional electron gas. The HEMT includes a passivation layer above the barrier layer; a gate cap layer above the gate region barrier layer; the upper part of the gate cap layer is subjected to surface plasma oxidation to form an oxide dielectric layer, or a single-layer or multiple gate dielectric insertion layer is directly deposited thereon. The HEMT includes a gate is located above the gate dielectric insertion layer; the gate is in contact with the passivation layer; and a field plate extends from the gate to the drain on the passivation layer.