公开(公告)号：US11830923B2

公开(公告)日：2023-11-28

申请号：US17718055

申请日：2022-04-11

申请人： DB HiTek Co., Ltd.

发明人： Seung Hyun Eom ,  Jin Hyo Jung ,  Hae Taek Kim ,  Ja Geon Koo ,  Ki Won Lim ,  Hyun Joong Lee ,  Sang Yong Lee

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L23/528

CPC分类号： H01L29/4991 ,  H01L29/0653 ,  H01L23/528

摘要： Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

公开(公告)号：US11640938B2

公开(公告)日：2023-05-02

申请号：US17460998

申请日：2021-08-30

申请人： DB HITEK CO., LTD.

发明人： Ki Won Lim ,  Jin Hyo Jung ,  Hae Taek Kim ,  Seung Hyun Eom ,  Ja Geon Koo ,  Hyun Joong Lee ,  Sang Yong Lee

IPC分类号： H01L21/00 ,  H01L23/528 ,  H01L27/12

摘要： A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.