公开(公告)号：US09735114B1

公开(公告)日：2017-08-15

申请号：US15391631

申请日：2016-12-27

申请人： DELTA ELECTRONICS INT'L (SINGAPORE) PTE LTD

发明人： Xiaofeng Xu ,  Beng Beng Lim ,  Yiu Wai Lai

IPC分类号： H01L21/56 ,  H01L23/498 ,  H01L23/48 ,  H01L21/48 ,  H01L23/538

CPC分类号： H01L23/5389 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/4864 ,  H01L21/568 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2224/92244

摘要： A first insulation layer comprising stacked prepreg layers is provided, and a metallic protective layer is formed on the first insulation layer. A first alignment mark is formed on the first insulation layer, and an accommodation cavity is formed in the first insulation layer according to the first alignment mark. A second alignment mark is formed on the first insulation layer according to the first alignment mark. A carrier plate is attached on the first insulation layer through a thermal release tape layer, and the semiconductor device is temporarily fixed on the thermal release tape layer within the accommodation cavity according to the second alignment mark. A semi-cured second insulation layer is placed over the first insulation layer, and the second insulation layer is laminated and cured. A re-distribution layer is formed on the second insulation layer, and the re-distribution layer is electrically connected with the semiconductor device.