公开(公告)号：US20220392819A1

公开(公告)日：2022-12-08

申请号：US17829956

申请日：2022-06-01

Applicant: DENSO CORPORATION

Inventor： Sachio KODAMA ,  Hiroaki YOSHIZAWA ,  Masanori OOSHIMA ,  Takahiro HIRANO

IPC: H01L23/31 ,  H01L23/433 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor element, a sealing member, and a first conductive plate. The semiconductor element includes a first electrode. The sealing member seals the semiconductor element. The first conductive plate includes a first surface facing the first electrode inside the sealing member. The first surface of the first conductive plate includes a mounting region, a roughened region and a non-roughened region. The first electrode is joined to the mounting region. The roughened region is located around the mounting region. The non-roughened region is located between the roughened region and an outer peripheral edge of the first surface. Surface roughness of the roughened region is larger than surface roughness of the non-roughened region.