SEMICONDUCTOR DEVICE AND MAUNFACTURING METHOD OF SEMICONDUCTOR DEVICE

    公开(公告)号:US20220068772A1

    公开(公告)日:2022-03-03

    申请号:US17392446

    申请日:2021-08-03

    Abstract: In a semiconductor device, a first lead frame and a second lead frame are fixed to a metal conductor base by an organic insulating film made of a polyimide-based material. The organic insulating film satisfies relationships of tpress1>tcast1 and tpress2>tcast1, where tpress1 is a thickness of a portion of the organic insulating film sandwiched between the metal conductor base and the first lead frame, tpress2 is a thickness of a portion of the organic insulating film sandwiched between the metal conductor base and the second lead frame, and tcast1 is a thickness of a portion of the organic insulating film that is not sandwiched between the metal conductor base and the first lead frame and is not sandwiched between the metal conductor base and the second lead frame.

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