公开(公告)号：US11587921B2

公开(公告)日：2023-02-21

申请号：US17034678

申请日：2020-09-28

Applicant: DENSO CORPORATION

Inventor： Satoru Sugita ,  Kosuke Yuzawa ,  Susumu Yamada ,  Kenji Komiya

IPC: H01L25/18 ,  H01L23/00 ,  H02M3/158 ,  H01L23/495 ,  H01L23/373 ,  H02P27/06 ,  B60L50/51

Abstract: A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.