公开(公告)号：US20180172530A1

公开(公告)日：2018-06-21

申请号：US15580426

申请日：2016-05-12

Applicant: DENSO CORPORATION

Inventor： Kouhei YAMAGUCHI ,  Masakazu YATOU ,  Minoru MURATA

IPC: G01L9/00 ,  H01L23/10 ,  H01L21/768 ,  H01L23/538

CPC classification number: G01L9/0042 ,  G01L9/0054 ,  H01L21/76898 ,  H01L23/10 ,  H01L23/5385

Abstract: A semiconductor device includes: a first substrate with one side on which a sensing unit for a physical quantity is arranged and multiple diffusion wiring layers electrically connected to the sensing unit are arranged by impurity diffusion; and a second substrate having one side which is bonded to the one side of the first substrate. An air tight chamber is provided between the first substrate and the second substrate. The sensing unit is sealed in the air tight chamber. The first substrate includes an outer edge portion as a portion of the one side of the first substrate surrounding multiple diffusion wiring layers, and multiple diffusion wiring layers are arranged in an inner edge portion. The outer edge portion has an impurity concentration which is constant in a circumferential direction along an edge of the first substrate.

公开(公告)号：US20180033680A1

公开(公告)日：2018-02-01

申请号：US15550062

申请日：2016-02-25

Applicant: DENSO CORPORATION

Inventor： Masakazu YATOU

IPC: H01L21/762 ,  B32B38/00 ,  B32B37/06

CPC classification number: H01L21/76251 ,  B32B37/06 ,  B32B38/0008 ,  B32B2457/14 ,  H01L21/762

Abstract: A substrate bonding method includes: preparing a first substrate having a first silicon oxide film with a film thickness of 50 nm or more arranged on the first substrate, and a second substrate having a second silicon oxide film arranged on the second substrate; bonding the first substrate and the second substrate together in a state where the first silicon oxide film and the second silicon oxide film face each other; and heating and bonding the first substrate and the second substrate. The preparing of the first substrate and the second substrate includes preparing the second substrate having the second silicon oxide film with a film thickness of 2.5 nm or less. The heating and bonding of the first substrate and the second substrate includes heating the first substrate and the second substrate at a temperature of 200° C. or more and 800° C. or less.