公开(公告)号：US20190204171A1

公开(公告)日：2019-07-04

申请号：US16296920

申请日：2019-03-08

Applicant: DENSO CORPORATION

Inventor： Akira INABA ,  Minoru MURATA

IPC: G01L9/00 ,  B81B7/00

CPC classification number: G01L9/0051 ,  B81B7/0048 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/00 ,  G01L13/06 ,  H01L29/84

Abstract: A pressure sensor may include a sensor chip and a support member. The sensor chip may include a diaphragm and an inner space. The diaphragm may have a thin plate shape. The diaphragm may be bent in a thickness direction by a fluid pressure. The inner space may be provided by a space adjacent to the diaphragm in the thickness direction. The support member may support the sensor chip at a position separated from the diaphragm. An outer shape of the sensor chip may be provided by a polygonal shape or a circular shape. An outer shape of the diaphragm may be provided by a polygonal shape or a circular shape.

公开(公告)号：US20190051575A1

公开(公告)日：2019-02-14

申请号：US16078131

申请日：2017-02-23

Applicant: DENSO CORPORATION

Inventor： Kazuyuki KAKUTA ,  Hisanori YOKURA ,  Minoru MURATA

IPC: H01L23/31 ,  H01L23/48 ,  H01L23/528 ,  H01L23/60 ,  H01L29/84 ,  H01L21/266 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/027 ,  H01L21/56 ,  G01L9/00

Abstract: A semiconductor device includes: a first substrate having connection parts at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connection parts; through-electrodes respectively arranged at through-holes and electrically connected with the connection parts; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.

公开(公告)号：US20180172530A1

公开(公告)日：2018-06-21

申请号：US15580426

申请日：2016-05-12

Applicant: DENSO CORPORATION

Inventor： Kouhei YAMAGUCHI ,  Masakazu YATOU ,  Minoru MURATA

IPC: G01L9/00 ,  H01L23/10 ,  H01L21/768 ,  H01L23/538

CPC classification number: G01L9/0042 ,  G01L9/0054 ,  H01L21/76898 ,  H01L23/10 ,  H01L23/5385

Abstract: A semiconductor device includes: a first substrate with one side on which a sensing unit for a physical quantity is arranged and multiple diffusion wiring layers electrically connected to the sensing unit are arranged by impurity diffusion; and a second substrate having one side which is bonded to the one side of the first substrate. An air tight chamber is provided between the first substrate and the second substrate. The sensing unit is sealed in the air tight chamber. The first substrate includes an outer edge portion as a portion of the one side of the first substrate surrounding multiple diffusion wiring layers, and multiple diffusion wiring layers are arranged in an inner edge portion. The outer edge portion has an impurity concentration which is constant in a circumferential direction along an edge of the first substrate.