公开(公告)号：US20230073379A1

公开(公告)日：2023-03-09

申请号：US17900950

申请日：2022-09-01

申请人： DENSO CORPORATION

发明人： Sodai NOMURA ,  Tomoki KAWAZU ,  Bahman SOLTANI ,  Yutaro ISSHIKI ,  Nobuyuki NUNOME ,  Shiro OKITA ,  Riku ONISHI

IPC分类号： B28D5/00 ,  B23K26/53

摘要： A manufacturing method of semiconductor wafers includes preparing a ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor from the ingot.