公开(公告)号：US20240326165A1

公开(公告)日：2024-10-03

申请号：US18735595

申请日：2024-06-06

Applicant: DENSO CORPORATION

Inventor： Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Bahman SOLTANI ,  Shunsuke SOBAJIMA

IPC: B23K26/082 ,  B23K26/38

CPC classification number: B23K26/082 ,  B23K26/38

Abstract: A surface of one end side of an ingot in a height direction thereof is irradiated with a laser beam having a permeability to the ingot, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. A laser scanning irradiating the laser beam is performed for a plurality of times changing the irradiation position in a second direction while causing an irradiation position of the laser beam to move in a first direction. With a single laser scanning, a plurality of laser beams are irradiated in which irradiation positions are different in the first direction and the second direction.

公开(公告)号：US20230115673A1

公开(公告)日：2023-04-13

申请号：US17960847

申请日：2022-10-06

Applicant: DENSO CORPORATION ,  National University Corporation Saitama University

Inventor： Bahman SOLTANI ,  Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Shunsuke SOBAJIMA ,  Yutaro ISSHIKI ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Yohei YAMADA ,  Junichi IKENO

IPC: B23K26/38 ,  B23K26/402

Abstract: A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.

公开(公告)号：US20240326174A1

公开(公告)日：2024-10-03

申请号：US18735769

申请日：2024-06-06

Applicant: DENSO CORPORATION

Inventor： Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Bahman SOLTANI ,  Shunsuke SOBAJIMA

IPC: B23K26/53 ,  B23K26/082 ,  B23K26/70 ,  B23K101/40 ,  H01L21/67

CPC classification number: B23K26/53 ,  B23K26/082 ,  B23K26/707 ,  H01L21/67092 ,  B23K2101/40

Abstract: A wafer manufacturing method for obtaining a wafer from an ingot includes the following procedure, steps or processes. A surface of one end side of the ingot in a height direction thereof is irradiated with a laser beam to which the ingot has transparency, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. At this moment, the laser beam is irradiated such that a frequency of irradiation in a facet region is higher than that in a non-facet region. A wafer precursor as a portion between the surface of the ingot and the peeling layer is peeled from the ingot at the peeling layer. A major surface of a peeling body having a plate like shape, the peeling body being obtained by the wafer peeling step, is planarized electrically, chemically and mechanically, thereby obtaining a wafer.

公开(公告)号：US20230073379A1

公开(公告)日：2023-03-09

申请号：US17900950

申请日：2022-09-01

Applicant: DENSO CORPORATION

Inventor： Sodai NOMURA ,  Tomoki KAWAZU ,  Bahman SOLTANI ,  Yutaro ISSHIKI ,  Nobuyuki NUNOME ,  Shiro OKITA ,  Riku ONISHI

IPC: B28D5/00 ,  B23K26/53

Abstract: A manufacturing method of semiconductor wafers includes preparing a ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor from the ingot.