公开(公告)号：US20240371629A1

公开(公告)日：2024-11-07

申请号：US18771239

申请日：2024-07-12

Applicant: DENSO CORPORATION

Inventor： Naoki MARUNO ,  Kazufumi AOKI ,  Bahman SOLTANI ,  Ryuta FURUKAWA

IPC: H01L21/02 ,  C25D11/02 ,  C25D11/32

Abstract: A surface processing method of a semiconductor wafer includes the following processes, procedures or steps: a pulsed current of which the current density is larger than or equal to 20 mA/cm2 is caused to flow through the semiconductor wafer as an anode in an electrolyte solution, thereby anodizing an object surface of the semiconductor wafer; and in a state where a surface processing pad having a grinding stone layer is disposed such that the grinding stone layer faces the object surface, an oxide generated by the anodization is selectively removed by the grinding stone layer.