公开(公告)号：US20220384185A1

公开(公告)日：2022-12-01

申请号：US17750450

申请日：2022-05-23

Applicant: DENSO CORPORATION

Inventor： Kazufumi AOKI ,  Naoki MARUNO ,  Bahman SOLTANI ,  Yuya KATO ,  Kyohei KOTAKE ,  Shinji MUKOTA ,  Manabu TOMISAKA ,  Yasuo ISHIHARA ,  Shusaku NAKAZAWA ,  Tetsuji YAMAGUCHI

IPC: H01L21/02 ,  H01L21/304

Abstract: Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.

公开(公告)号：US20240371629A1

公开(公告)日：2024-11-07

申请号：US18771239

申请日：2024-07-12

Applicant: DENSO CORPORATION

Inventor： Naoki MARUNO ,  Kazufumi AOKI ,  Bahman SOLTANI ,  Ryuta FURUKAWA

IPC: H01L21/02 ,  C25D11/02 ,  C25D11/32

Abstract: A surface processing method of a semiconductor wafer includes the following processes, procedures or steps: a pulsed current of which the current density is larger than or equal to 20 mA/cm2 is caused to flow through the semiconductor wafer as an anode in an electrolyte solution, thereby anodizing an object surface of the semiconductor wafer; and in a state where a surface processing pad having a grinding stone layer is disposed such that the grinding stone layer faces the object surface, an oxide generated by the anodization is selectively removed by the grinding stone layer.