公开(公告)号：US20250157961A1

公开(公告)日：2025-05-15

申请号：US19022203

申请日：2025-01-15

Applicant: DENSO CORPORATION

Inventor： Shiro MIWA ,  Kazuyuki KAKUTA ,  Tsuyoshi FUJIWARA

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a semiconductor substrate for a semiconductor element; a first electrode and a second electrode provided on one surface of the semiconductor element; and a partition wall provided on the one surface of the semiconductor element to separate the first electrode from the second electrode. The first electrode and the second electrode are formed of an Ni plating layer, and the phosphorus concentration in the Ni plating layer is 4 wt % or less. The partition wall is made of an insulating material and has a shape protruding toward the first electrode or the second electrode.