公开(公告)号：US20250157961A1

公开(公告)日：2025-05-15

申请号：US19022203

申请日：2025-01-15

Applicant: DENSO CORPORATION

Inventor： Shiro MIWA ,  Kazuyuki KAKUTA ,  Tsuyoshi FUJIWARA

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a semiconductor substrate for a semiconductor element; a first electrode and a second electrode provided on one surface of the semiconductor element; and a partition wall provided on the one surface of the semiconductor element to separate the first electrode from the second electrode. The first electrode and the second electrode are formed of an Ni plating layer, and the phosphorus concentration in the Ni plating layer is 4 wt % or less. The partition wall is made of an insulating material and has a shape protruding toward the first electrode or the second electrode.

公开(公告)号：US20190051575A1

公开(公告)日：2019-02-14

申请号：US16078131

申请日：2017-02-23

Applicant: DENSO CORPORATION

Inventor： Kazuyuki KAKUTA ,  Hisanori YOKURA ,  Minoru MURATA

IPC: H01L23/31 ,  H01L23/48 ,  H01L23/528 ,  H01L23/60 ,  H01L29/84 ,  H01L21/266 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/027 ,  H01L21/56 ,  G01L9/00

Abstract: A semiconductor device includes: a first substrate having connection parts at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connection parts; through-electrodes respectively arranged at through-holes and electrically connected with the connection parts; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.