公开(公告)号：US12283593B2

公开(公告)日：2025-04-22

申请号：US17903113

申请日：2022-09-06

Applicant: DENSO CORPORATION

Inventor： Shuichi Toriyama ,  Masakiyo Sumitomo ,  Tasbir Rahman

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/872

Abstract: A semiconductor device includes a semiconductor substrate, a contact region, a carrier suppression region and an electrode. The semiconductor substrate is shared by an insulated gate bipolar transistor (IGBT) region with an IGBT element and a freewheeling diode (FWD) region with an FWD element. The carrier suppression region is exposed from a surface of the semiconductor substrate in the IGBT region, and has a lower impurity concentration than the contact region. The carrier suppression region has a Schottky barrier junction with the electrode.