公开(公告)号：US20250062256A1

公开(公告)日：2025-02-20

申请号：US18939129

申请日：2024-11-06

Applicant: DENSO CORPORATION

Inventor： Shuji ASANO ,  Koichi YAKO

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/522

Abstract: A signal transmission device having a capacitor coupler includes: a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a lower electrode disposed above the semiconductor substrate across a portion of the first insulating film; an upper electrode disposed opposite the lower electrode across the first insulating film, forming a capacitor together with the lower electrode, and configured to be applied with a voltage higher than a voltage applied to the lower electrode; a second insulating film disposed above the first insulating film and covering at least a portion in an outer peripheral portion of the upper electrode that is in contact with the first insulating film; and a third insulating film disposed above the second insulating film and made of an insulating organic material. The second insulating film is made of a material having a higher insulation breakdown voltage than the third insulating film.

公开(公告)号：US20240128309A1

公开(公告)日：2024-04-18

申请号：US18394881

申请日：2023-12-22

Applicant: DENSO CORPORATION

Inventor： Shuji ASANO ,  Koichi YAKO ,  Akira YAMADA

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L23/60

CPC classification number: H01L28/60 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/60 ,  H01L24/16 ,  H01L24/32 ,  H01L25/0657 ,  H01L2224/1601 ,  H01L2224/16146 ,  H01L2224/3201 ,  H01L2224/32146 ,  H01L2225/06517 ,  H01L2924/1205 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: A signal transmission device having a capacitor coupler includes a semiconductor substrate, a low voltage circuit region, an insulating film formed on the semiconductor substrate, a lower electrode formed on the semiconductor substrate via the insulating film, and an upper electrode disposed opposite to the lower electrode via the insulating film interposed therebetween. A shield portion includes a conductor to which a low voltage is applied is provided between the lower electrode and the upper electrode and the low voltage circuit region. When a stacking direction of the lower electrode and the upper electrode is defined as a height direction, the shield portion is located higher than the low voltage circuit region and has an eaves part extending on an opposite side with respect to the lower electrode and the upper electrode.