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公开(公告)号：US20190315622A1
公开(公告)日：2019-10-17
申请号：US16376336
申请日：2019-04-05
Applicant: DENSO CORPORATION
Inventor： Takahiro HIGUCHI , Yusuke KAWAI , Sumio ITO
Abstract: A semiconductor device includes: a silicon layer in which a trench is disposed; a surface structure portion disposed on the silicon layer at a position distant from the trench and having a surface provided by a metal layer; and a low electric conductivity portion disposed on the surface of the metal layer or in a part of the resist disposed on the trench side of the metal layer, and having an electric conductivity lower than at least a part of the metal layer covering a trench side portion of the surface of the metal layer.
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