公开(公告)号：US11192781B2

公开(公告)日：2021-12-07

申请号：US16376336

申请日：2019-04-05

Applicant: DENSO CORPORATION

Inventor： Takahiro Higuchi ,  Yusuke Kawai ,  Sumio Ito

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/3065

Abstract: A semiconductor device includes: a silicon layer in which a trench is disposed; a surface structure portion disposed on the silicon layer at a position distant from the trench and having a surface provided by a metal layer; and a low electric conductivity portion disposed on the surface of the metal layer or in a part of the resist disposed on the trench side of the metal layer, and having an electric conductivity lower than at least a part of the metal layer covering a trench side portion of the surface of the metal layer.