公开(公告)号：US20150035569A1

公开(公告)日：2015-02-05

申请号：US14332761

申请日：2014-07-16

Applicant: DENSO CORPORATION

Inventor： Ryotaro MIURA ,  Takashi GOTOU

IPC: H03K17/081

CPC classification number: H03K17/08112 ,  H03K17/167 ,  H03K17/168

Abstract: A semiconductor element module includes a driving element and a voltage change detecting element each formed of a voltage driving semiconductor element. The voltage change detecting element detects a change of a voltage between a collector and an emitter or between a drain and a source of the driving element. A collector or a drain of the voltage change detecting element is connected to the collector or the drain of the driving element, and a gate of the voltage change detecting element is connected to an emitter or a source of the voltage change detecting element. The emitter or the source of the voltage change detecting element is provided as a detecting terminal.

Abstract translation: 半导体元件模块包括由电压驱动半导体元件形成的驱动元件和电压变化检测元件。 电压变化检测元件检测集电极与发射极之间或驱动元件的漏极与源极之间的电压变化。 电压变化检测元件的集电极或漏极连接到驱动元件的集电极或漏极，电压变化检测元件的栅极连接到电压变化检测元件的发射极或源极。 电压变化检测元件的发射极或源极被提供作为检测端子。