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275 条记录 (耗时 0.027 秒)

    Circuit to implement a diode function
    2.
    发明授权
    Circuit to implement a diode function 有权

    公开(公告)号：US09892877B2

    公开(公告)日：2018-02-13

    申请号：US14657991

    申请日：2015-03-13

    申请人： STMicroelectronics (Alps) SAS

    发明人： Vratislav Michal ,  Denis Cottin

    IPC分类号： H01H47/00 ,  H03K17/16 ,  H03K17/30

    CPC分类号： H01H47/00 ,  H03K17/167 ,  H03K17/30 ,  H03K2017/307 ,  Y10T307/76

    摘要： A circuit including: a plurality of first switches connected in parallel between a first terminal and a second terminal; and a control circuit capable of implementing the following steps at each period of a clock signal: comparing the voltage between the first and second terminals with a reference voltage; if the voltage between the first and second terminals is greater than the reference voltage, turning on one of the first switches without modifying the state of the other switches; and if the voltage between the first and second terminals is smaller than the reference voltage, turning off one of the first switches without modifying the state of the other switches.

    Control device for power conversion apparatus and power conversion apparatus
    3.
    发明授权
    Control device for power conversion apparatus and power conversion apparatus 有权

    公开(公告)号：US09762117B2

    公开(公告)日：2017-09-12

    申请号：US15199881

    申请日：2016-06-30

    申请人： FUJI ELECTRIC CO., LTD.

    发明人： Masahiro Sasaki

    IPC分类号： H02M1/088 ,  H02M1/32 ,  H02M1/00 ,  H03K17/18

    CPC分类号： H02M1/32 ,  H02M1/088 ,  H02M2001/0009 ,  H03K17/167 ,  H03K17/18

    摘要： A sense voltage obtained by feeding a sense current of an IGBT into a sense resistor is input to a comparator, and as the reference voltage of the comparator, a sense voltage immediately before the IGBT is turned off is held by a sample and hold circuit for each switching, and is then divided by a voltage dividing circuit and the divided voltage is input to the comparator. The comparator compares the sense voltage with the voltage based on the sense voltage immediately before the IGBT is turned off, and therefore the comparator may accurately detect the falling edge time of the sense voltage and is used for the control for dissolving the imbalance in current with respect to the other IGBTs connected in parallel.

    Semiconductor device including output circuit constituted of plural unit buffer circuits in which impedance thereof are adjustable
    6.
    发明授权
    Semiconductor device including output circuit constituted of plural unit buffer circuits in which impedance thereof are adjustable 有权
    包括由其阻抗可调的多个单位缓冲电路构成的输出电路的半导体装置

    公开(公告)号：US09368189B2

    公开(公告)日：2016-06-14

    申请号：US14295213

    申请日：2014-06-03

    申请人： PS4 Luxco S.a.r.l.

    发明人： Hideyuki Yokou ,  Koji Uemura ,  Manabu Ishimatsu

    IPC分类号： H03K19/003 ,  G11C11/4076 ,  H03K17/16 ,  H03K19/00 ,  G11C11/4093 ,  G11C5/14 ,  G11C29/02 ,  H03K19/0185

    CPC分类号： G11C11/4076 ,  G11C5/147 ,  G11C11/4093 ,  G11C29/022 ,  G11C29/028 ,  G11C2207/2254 ,  H03K17/167 ,  H03K19/0005 ,  H03K19/018571

    摘要： A semiconductor device includes an output circuit having a plurality of unit buffer circuits, an impedance of each unit buffer circuit of the plurality of unit buffer circuits being adjustable, a control circuit configured to selectively activate one or more unit buffer circuits of the plurality of unit buffer circuits, and an impedance adjustment unit configured to adjust the impedance of each of the unit buffer circuits of the plurality of unit buffer circuits. The impedance adjustment unit includes a first power line, a replica circuit, and a load current generation circuit. The replica circuit and the load current generation circuit are coupled in common to the first power line, the replica circuit has a replica impedance that is substantially equal to the impedance of the output circuit, and the load current generation circuit changes current flowing therethrough.

    摘要翻译： 半导体器件包括具有多个单元缓冲电路的输出电路，多个单元缓冲电路中的每个单元缓冲电路的阻抗是可调节的，控制电路被配置为选择性地激活多个单元中的一个或多个单元缓冲电路 缓冲电路和阻抗调整单元，被配置为调整多个单元缓冲电路中的每个单元缓冲电路的阻抗。 阻抗调整单元包括第一电力线，复制电路和负载电流产生电路。 复制电路和负载电流产生电路共同耦合到第一电力线，复制电路具有基本上等于输出电路的阻抗的复制阻抗，并且负载电流产生电路改变流过其中的电流。

    Apparatus for generating motor driving control signal
    8.
    发明授权
    Apparatus for generating motor driving control signal 有权
    用于产生电机驱动控制信号的装置

    公开(公告)号：US09124205B2

    公开(公告)日：2015-09-01

    申请号：US13746855

    申请日：2013-01-22

    申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

    发明人： Soo Woong Lee

    IPC分类号： H02P6/14 ,  H02P6/18 ,  H02P6/16 ,  H03K17/082 ,  H03K17/16

    CPC分类号： H02P6/182 ,  H02P6/17 ,  H03K17/0822 ,  H03K17/167

    摘要： There is provided an apparatus for generating a motor driving control signal, the apparatus including: an oscillating unit generating an oscillating signal having a preset duty ratio; a selecting unit including a first switch switching a first path connected between the oscillating unit and an output terminal and a second switch complementarily operated with respect to the first switch and switching a second path connected to the first path in parallel; and a duty adjusting unit installed on the second path between the second switch and the output terminal, adjusting a duty ratio of the oscillating signal according to a rotation speed signal of a motor, and outputting the signal having the adjusted duty ratio as a driving control signal through the output terminal.

    摘要翻译： 提供了一种用于产生电机驱动控制信号的装置，该装置包括：产生具有预设占空比的振荡信号的振荡单元; 选择单元，其包括切换连接在所述振荡单元和输出端子之间的第一路径的第一开关和相对于所述第一开关互补操作的第二开关，并且并联连接到所述第一路径的第二路径切换; 以及负载调节单元，安装在第二开关和输出端子之间的第二路径上，根据电动机的转速信号调整振荡信号的占空比，并输出具有调整占空比的信号作为驱动控制 信号通过输出端子。

    Solid state power controller gate control
    9.
    发明授权
    Solid state power controller gate control 有权
    固态电源控制器门控制

    公开(公告)号：US09071245B2

    公开(公告)日：2015-06-30

    申请号：US13869516

    申请日：2013-04-24

    申请人： HAMILTON SUNDSTRAND CORPORATION

    发明人： Gregory I. Rozman ,  Steven J. Moss

    IPC分类号： H03K3/00 ,  H03K17/16

    CPC分类号： H03K17/167 ,  H03K17/166 ,  H03K2217/0063

    摘要： A system for controlling gate power includes a metal oxide semiconductor field effect transistor (MOSFET) configured to supply power to a load according to a gate control voltage applied to a gate of the MOSFET. The system includes a gate control circuit configured to turn on and off the gate control voltage supplied to the gate of the MOSFET. The system also includes a ramping circuit configured to perform at least one of ramping up a voltage applied to the gate of the MOSFET based on the gate control circuit turning on power to the gate of the MOSFET and ramping down the voltage applied to the gate of the MOSFET based on the gate control circuit turning off power to the gate of the MOSFET.

    摘要翻译： 用于控制栅极功率的系统包括金属氧化物半导体场效应晶体管（MOSFET），其被配置为根据施加到MOSFET的栅极的栅极控制电压向负载供电。 该系统包括一个门控电路，其配置为导通和关断提供给MOSFET栅极的栅极控制电压。 该系统还包括斜坡电路，该斜坡电路被配置为基于栅极控制电路来施加施加到MOSFET的栅极的电压中的至少一个，所述栅极控制电路接通MOSFET的栅极的功率并降低施加到栅极的电压 基于栅极控制电路的MOSFET关断MOSFET的栅极电源。

    SEMICONDUCTOR DEVICE INCLUDING OUTPUT CIRCUIT CONSTITUTED OF PLURAL UNIT BUFFER CIRCUITS IN WHICH IMPEDANCE THEREOF ARE ADJUSTABLE
    10.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING OUTPUT CIRCUIT CONSTITUTED OF PLURAL UNIT BUFFER CIRCUITS IN WHICH IMPEDANCE THEREOF ARE ADJUSTABLE 有权
    半导体器件，其中包括由多个单元缓冲器电路构成的输出电路，其电阻可以调整

    公开(公告)号：US20130088258A1

    公开(公告)日：2013-04-11

    申请号：US13649060

    申请日：2012-10-10

    申请人： Elpida Memory, Inc.

    发明人： Hideyuki YOKOU ,  Koji UEMURA ,  Manabu ISHIMATSU

    IPC分类号： H03K17/16

    CPC分类号： G11C11/4076 ,  G11C5/147 ,  G11C11/4093 ,  G11C29/022 ,  G11C29/028 ,  G11C2207/2254 ,  H03K17/167 ,  H03K19/0005 ,  H03K19/018571

    摘要： The semiconductor device comprises an output circuit that includes a plurality of unit buffer circuits each of which has an adjustable impedance, a control circuit that selectively activates one or ones of the unit buffer circuits, and an impedance adjustment unit that adjusts the impedances of the unit buffer circuits and includes a power line, a replica circuit, which has a replica impedance that is substantially equal to the adjustable impedance of each of the unit buffer circuits, and a load current generation circuit, which changes current flowing therethrough in accordance with the number of activated the one or ones of the unit buffer circuits. The replica circuit and the load current generation circuit are connected in common to the power line.

    摘要翻译： 该半导体器件包括输出电路，该输出电路包括多个具有可调阻抗的单元缓冲电路，选择性地激活单个缓冲电路中的一个或多个的控制电路，以及调整该单元的阻抗的阻抗调节单元 缓冲电路，并且包括电源线，复制电路，其具有基本上等于每个单元缓冲电路的可调阻抗的复制阻抗;以及负载电流产生电路，其根据数量改变流过其中的电流 激活单个缓冲器电路中的一个或多个。 复制电路和负载电流产生电路共同连接到电力线。