公开(公告)号：US20190035684A1

公开(公告)日：2019-01-31

申请号：US16082570

申请日：2017-05-11

Applicant: DENSO CORPORATION

Inventor： Masatake NAGAYA ,  Jun KAWAI ,  Yosuke TOMITA

IPC: H01L21/78 ,  H01L29/16 ,  H01L23/544

Abstract: In a case where a back surface of an SiC semiconductor wafer, which is provided by a C surface, is covered with a back surface electrode and a scribe line cannot be confirmed, a reference line is formed before dicing. As a result, even when a processing upper surface from which dicing is carried out is a C surface, the dicing can be performed by estimating a scribe line with reference to the reference line. Accordingly, even if the semiconductor wafer is cut at a higher speed than that in the conventional art, a high-quality SiC semiconductor device with less chipping can be manufactured. A blade abrasion can be reduced, and costs can be also reduced.