公开(公告)号：US20140299886A1

公开(公告)日：2014-10-09

申请号：US14197542

申请日：2014-03-05

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Kazuhiko SUGIURA

IPC: H01L29/16 ,  H01L21/02

CPC classification number: H01L29/1608 ,  H01L21/02529 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/306 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7828

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semiconductor substrate is terminated with an element, which has a Pauling electronegativity larger than silicon and a binding energy with silicon larger than a binding energy of Si—H.

Abstract translation: 碳化硅半导体器件包括：由碳化硅单晶制成并具有主表面和背面的半导体衬底; 以及以欧姆方式接触半导体衬底的主表面和背面之一的欧姆电极。 欧姆电极与半导体衬底的主表面和背面之间的边界用一个元素终止，该元件具有比硅更高的鲍林电负性，并且与硅的结合能大于Si-H的结合能。

公开(公告)号：US20190109067A1

公开(公告)日：2019-04-11

申请号：US16216044

申请日：2018-12-11

Applicant: DENSO CORPORATION

Inventor： Kazuhiko SUGIURA ,  Tomohito IWASHIGE ,  Jun KAWAI

IPC: H01L23/373 ,  H01L29/739 ,  H01L23/62 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

公开(公告)号：US20190035684A1

公开(公告)日：2019-01-31

申请号：US16082570

申请日：2017-05-11

Applicant: DENSO CORPORATION

Inventor： Masatake NAGAYA ,  Jun KAWAI ,  Yosuke TOMITA

IPC: H01L21/78 ,  H01L29/16 ,  H01L23/544

Abstract: In a case where a back surface of an SiC semiconductor wafer, which is provided by a C surface, is covered with a back surface electrode and a scribe line cannot be confirmed, a reference line is formed before dicing. As a result, even when a processing upper surface from which dicing is carried out is a C surface, the dicing can be performed by estimating a scribe line with reference to the reference line. Accordingly, even if the semiconductor wafer is cut at a higher speed than that in the conventional art, a high-quality SiC semiconductor device with less chipping can be manufactured. A blade abrasion can be reduced, and costs can be also reduced.

公开(公告)号：US20130285070A1

公开(公告)日：2013-10-31

申请号：US13855072

申请日：2013-04-02

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Norihito TOKURA ,  Kazuhiko SUGIURA

IPC: H01L29/16 ,  H01L21/22

CPC classification number: H01L21/0485 ,  H01L21/0455 ,  H01L21/22 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7827

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.

公开(公告)号：US20130102127A1

公开(公告)日：2013-04-25

申请号：US13626072

申请日：2012-09-25

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Tetsuji Kondou ,  Kazuhiko Sugiura ,  Nobuyuki Kato

IPC: H01L21/82

CPC classification number: H01L21/8213 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/6836 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7828 ,  H01L2221/68327

Abstract: A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam.

Abstract translation: 公开了一种具有欧姆电极的半导体器件的制造方法。 制造方法包括：在半导体衬底的后表面上形成金属薄膜; 通过用激光束照射金属薄膜通过激光退火形成欧姆电极; 并且通过在半导体衬底的切割区域切割将半导体衬底切割成芯片。 在形成欧姆电极时，金属薄膜的激光照射是在逐个芯片的基础上进行的，而切割区域不被激光束照射。

公开(公告)号：US20190259615A1

公开(公告)日：2019-08-22

申请号：US16260517

申请日：2019-01-29

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Kazuhiko SUGIURA

IPC: H01L21/04 ,  H01L29/45 ,  H01L29/16

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate having a front surface and a rear surface, and an ohmic electrode in ohmic contact with silicon carbide of at least one of the front surface or the rear surface of the silicon carbide semiconductor substrate. The ohmic electrode is made of Ni containing 0.1 wt % or more and 15 wt % or less of P as an impurity. The ohmic electrode contains Ni silicide including NiSi. The ohmic electrode further contains Ni5P2 in the Ni silicide. A method for manufacturing the silicon carbide semiconductor device includes forming a metal thin film on the silicon carbide that is to be in ohmic contact with the ohmic electrode, and forming the ohmic electrode by laser annealing that includes irradiating the metal thin film with laser light and reacting the Ni with Si in the silicon carbide to generate Ni silicide.

公开(公告)号：US20190214360A1

公开(公告)日：2019-07-11

申请号：US16353525

申请日：2019-03-14

Applicant: DENSO CORPORATION

Inventor： Kazuhiko SUGIURA ,  Tomohito IWASHIGE ,  Jun KAWAI

IPC: H01L23/00 ,  H01L23/367

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

公开(公告)号：US20180323261A1

公开(公告)日：2018-11-08

申请号：US15772125

申请日：2017-02-28

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Kazuhiko SUGIURA ,  Yasuji KIMOTO ,  Kayo KONDO

IPC: H01L29/16 ,  H01L29/45 ,  H01L29/417 ,  H01L21/02 ,  H01L21/268 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/3205 ,  H01L29/41725 ,  H01L29/456 ,  H01L29/66068

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate that has a front surface and a rear surface, and is made of silicon carbide; and an ohmic electrode that is ohmically connected to the front surface or the rear surface of the semiconductor substrate. The ohmic electrode includes a metal silicide part and a metal carbide part. The metal silicide part surrounds a periphery of the metal carbide part that has a block shape. The metal silicide part is disposed between the semiconductor substrate and the metal carbide part.

公开(公告)号：US20150079781A1

公开(公告)日：2015-03-19

申请号：US14547698

申请日：2014-11-19

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Norihito TOKURA ,  Kazuhiko SUGIURA

IPC: H01L21/04 ,  H01L29/16

CPC classification number: H01L21/0485 ,  H01L21/0455 ,  H01L21/22 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7827

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.

Abstract translation: 在碳化硅半导体器件的制造方法中，制备由单晶碳化硅制成的半导体衬底。 在要形成第一电极的半导体衬底的一部分，形成由包括杂质的电极材料制成的金属薄膜。 在形成金属薄膜之后，通过用激光照射金属薄膜来形成包括引入杂质的金属反应层的第一电极。