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公开(公告)号：US20220344906A1
公开(公告)日：2022-10-27
申请号：US17724570
申请日：2022-04-20
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Hiroyuki TARUMI , Yuki KAMATA , Keizo TAKEMASA , Kenichi NISHI , Yutaka OHNISHI
Abstract: An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers includes at least one quantum dot player doped with a p-type impurity. Further, the plurality of quantum dot layers includes at least two quantum dot layers having different emission wavelengths and different p-type impurity concentrations.
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公开(公告)号：US20250044508A1
公开(公告)日：2025-02-06
申请号：US18668813
申请日：2024-05-20
Inventor： Tatsuya KAMIYA , Yuki KAMATA , Toshihiro ODA
IPC: G02B6/122
Abstract: A phase adjuster includes: a first optical path extending along a predetermined direction to propagate a first light; and a second optical path extending along the predetermined direction to propagate a second light different from the first light. The first optical path and the second optical path oppose to each other. A portion of the first optical path and a portion of the second optical path are formed of members having different light refractive indexes.
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公开(公告)号：US20210373350A1
公开(公告)日：2021-12-02
申请号：US17319230
申请日：2021-05-13
Applicant: DENSO CORPORATION
Inventor： Toshihiro ODA , Yuki KAMATA , Koichi OYAMA
Abstract: A beam deflection system includes 2M laser light sources configured to emit laser lights, each laser light source being configured to switch two different center wavelengths to each other. The 2M laser light sources are divided into two sets of M types. The laser lights emitted from the two sets of M types of laser light sources are combined and input to a beam deflector. When (i) N is defined as an integer satisfying an expression of “1≤N≤M”, and (ii) center wavelengths of Nth laser light sources of the two sets of M laser light sources are defined as λN and λM+N, an expression of “λ1
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公开(公告)号：US20210063641A1
公开(公告)日：2021-03-04
申请号：US17009943
申请日：2020-09-02
Applicant: DENSO CORPORATION
Inventor： Yuki KAMATA , Toshihiro ODA
Abstract: A first optical waveguide is formed on a semiconductor substrate in such a way that the first optical waveguide is surrounded by clad layers. An outside portion of the first optical waveguide is formed as a terminator, which includes a taper portion and a bending structure portion. The taper portion has a width, which is gradually reduced in a direction to a forward end of the first optical waveguide. The taper portion coverts a light confinement condition from a strong condition to a weak condition in the direction to the forward end of the first optical waveguide. The bending structure portion has an arc shape extending from an outside end of the taper portion on a plane parallel to a surface of the semiconductor substrate.
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Patent Agency Ranking
公开(公告)号：US20230388018A1
公开(公告)日：2023-11-30
申请号：US18187307
申请日：2023-03-21
Inventor： Toshihiro ODA , Yuki KAMATA
IPC: H04B10/40
CPC classification number: H04B10/40
Abstract: An optical transceiver includes a plurality of light sources having a ring resonator, a reception antenna to receive light, and a wavelength-separating filter to separate, from the light received by the reception antenna, light of a same wavelength as the light output from a part of the plurality of light sources. The wavelength-separating filter is composed of the ring resonator included in the light source.
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公开(公告)号：US20230327406A1
公开(公告)日：2023-10-12
申请号：US18193980
申请日：2023-03-31
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Hitoshi YAMADA , Yuki KAMATA , Koichi OYAMA , Yutaka OHNISHI , Kenichi NISHI , Keizo TAKEMASA
CPC classification number: H01S5/3412 , C09K11/7492 , B82Y20/00
Abstract: In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.
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公开(公告)号：US20210305779A1
公开(公告)日：2021-09-30
申请号：US17210939
申请日：2021-03-24
Inventor： Yuki KAMATA , Koichi OYAMA , Hiroyuki TARUMI , Kiichi HAMAMOTO , Haisong JIANG
Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.
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公开(公告)号：US20240302597A1
公开(公告)日：2024-09-12
申请号：US18437287
申请日：2024-02-09
Inventor： Yuki KAMATA , Toshihiro ODA
CPC classification number: G02B6/305 , G02B6/036 , G02F1/0115
Abstract: A spot size converter includes: a first core layer extending in a first direction and stacked on a cladding layer in a second direction; and a second core layer spaced apart from the first core layer in a third direction. The first core layer has a flat shape in which a size in the second direction is smaller than a size in the third direction, and includes a first tapered portion in which a size thereof in the third direction decreases along an emission direction. A size of the second core layer in the second direction is larger than that of the first core layer in the second direction, and includes a second tapered portion in which a size thereof in the third direction increases along the emission direction. The second tapered portion is disposed to overlap the first tapered portion in the third direction.
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公开(公告)号：US20220158415A1
公开(公告)日：2022-05-19
申请号：US17501497
申请日：2021-10-14
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Yuki KAMATA , Hiroyuki TARUMI , Koichi OYAMA , Keizo TAKEMASA , Kenichi NISHI , Yutaka ONISHI
Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.
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