公开(公告)号：US20140361334A1

公开(公告)日：2014-12-11

申请号：US14468602

申请日：2014-08-26

Applicant: DENSO CORPORATION

Inventor： Hiromitsu TANABE ,  Kenji KOUNO ,  Yukio TSUZUKI

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/423

CPC classification number: H01L27/0664 ,  H01L27/0722 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

Abstract: In a semiconductor device including an IGBT and a freewheeling diode W≧2×L1/K1/2, where K≧2.5, W denotes a distance between the divided first regions, L1 denotes a thickness of the drift layer, k1 denotes a parameter that depends on structures of the insulated gate bipolar transistor and the freewheeling diode, and K denotes a value calculated by multiplying the parameter k1 by a ratio of a snapback voltage to a built-in potential between the deep well layer and the drift layer.

Abstract translation: 在包括IGBT和续流二极管W≥2×L1 / K1 / 2的半导体器件中，其中K≥2.5，W表示分割的第一区域之间的距离，L1表示漂移层的厚度，k1表示 取决于绝缘栅双极晶体管和续流二极管的结构，K表示通过将参数k1乘以深回阱层和漂移层之间的内置电位的回跳电压的比率而计算的值。