专利检索 ap:("DONGWOO FINE-CHEM CO., LTD.") AND inv:"JIN KYU ROH" 第 1 页

1.

发明公开
SILICON-ETCHANT COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME 审中-公开

公开(公告)号：US20240287383A1

公开(公告)日：2024-08-29

申请号：US18441167

申请日：2024-02-14

申请人： DONGWOO FINE-CHEM CO., LTD.

发明人： JIN KYU ROH , KYU SANG AHN , HYO JOONG YOON

IPC分类号： C09K13/00 , H01L21/306 , H01L21/308

CPC分类号： C09K13/00 , H01L21/30604 , H01L21/308

摘要： A silicon-etchant composition according to an embodiment may include quaternary alkyl ammonium hydroxide, an amine-based compound, and two or more types of nonionic surfactants represented by Chemical Formula 1 and having different lengths of a hydrophilic group. Accordingly, the silicon-etchant composition having improved etch rate and etching selectivity is provided.