公开(公告)号：US20170160834A1

公开(公告)日：2017-06-08

申请号：US15324023

申请日：2015-07-01

Applicant: DONGWOO FINE-CHEM CO., LTD.

Inventor： Yong Hwan KIM ,  Euk Kun YOON ,  Yong Seok CHOI

IPC: G06F3/044 ,  B05D1/28 ,  B05D1/02 ,  B05D1/32 ,  B05D1/18

CPC classification number: G06F3/044 ,  B05D1/02 ,  B05D1/18 ,  B05D1/28 ,  B05D1/32 ,  G06F2203/04103

Abstract: The present invention relates to a thick-film pattern structure formed by repeating a stacking process, specifically a thick-film pattern structure having a reduced taper angle at a pattern edge region after all layers of the same material are stacked in gradually reducing pattern widths, and a method of forming the thick-film pattern structure. The thick-film pattern structure according to the present invention comprises a thick-film pattern coating layer having a pattern width; and multiple thick-film pattern coating layers sequentially stacked on the thick-film pattern coating layer to have gradually reducing pattern widths at an edge region of the thick-film pattern coating layers, wherein the thick-film pattern coating layers provide a thick-film pattern having a stepped shape.