公开(公告)号：US20130248830A1

公开(公告)日：2013-09-26

申请号：US13804793

申请日：2013-03-14

申请人： DOW GLOBAL TECHNOLOGIES LLC ,  ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

发明人： Dean M. Welsh ,  Mark E. Ondari ,  Moo-Keun Chee ,  Bong-Ok Kim ,  Robert D. Froese ,  Matthew M. Meyer ,  Hyuck-Joo Kwon ,  Kyung-Hoon Choi ,  Young-Jun Cho

IPC分类号： H01L51/00 ,  H01L51/50

CPC分类号： H01L51/0067 ,  H01L51/0058 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/508

摘要： The invention provides a film comprising at least two layers, Layer A and Layer B, and wherein Layer(A) is formed from a Composition A comprising at least one compound selected from Formula A: wherein Np is selected from 1-naphthyl or 2-naphthyl, and wherein each R is described herein; and wherein Layer B is formed from a Composition B comprising at least one “HTL compound;” and wherein Layer A is not adjacent to Layer B. The invention also provides a composition comprising at least one compound selected from Formula A: wherein each R is described herein, and wherein the compound has a Tg greater than, or equal to, 115° C.

摘要翻译： 本发明提供一种包含至少两层A，B层的膜，其中层（A）由组合物A形成，所述组合物A包含至少一种选自式A的化合物：其中N p选自1-萘基或2-萘基， 萘基，并且其中每个R在本文中描述; 并且其中层B由包含至少一种“HTL化合物”的组合物B形成; 并且其中层A不与层B相邻。本发明还提供包含至少一种选自式A的化合物的组合物：其中每个R在本文中描述，并且其中该化合物的Tg大于或等于115° C。