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1.发明申请Tin-containing indium oxides, a process for producing them, a coating solution using them and electrically conductive coatings formed of them 有权含锡铟氧化物，其制造方法，使用它们的涂布溶液和由它们形成的导电涂层公开(公告)号：US20030030036A1
公开(公告)日：2003-02-13
申请号：US10108618
申请日：2002-03-28
IPC分类号： H01B001/00
CPC分类号： C01G19/00 , C01P2004/04 , C01P2004/54 , C01P2006/12 , H01B1/08
摘要： To a hydrochloric acid solution containing In and Sn and which is held at 20null C., an alkali solution is added to adjust pH to 3; the temperature of the mixed solution is raised to 90null C. and the alkali solution is further added to adjust pH to 7.5. The resulting precipitate is recovered by filtration, dehydrated and dried to yield a Sn-containing In hydroxide; the hydroxide is put into a tubular furnace and fired in a nitrogen gas atmosphere containing water vapor and NH3 gas at 600nullC. for 2 hours to produce a Sn-containing In oxide in the form of plates having a major axis of 0.041 nullm, a minor axis of 0.025 nullm and a major-to-minor axis ratio of 1.64. An ITO powder having a SnO2 content of 2-20 wt % is provided by mixing acicular and granular ITO particles in proportions within the range of from 2:98 to 98:2. A coating solution prepared from this mixed ITO powder is applied to provide a transparent conductive film having a sheet resistance of 10 knull/null or less, a light transmittance of at least 80%, and a haze value of no more than 2%.
摘要翻译： 向含有In和Sn的盐酸溶液中保持20℃，加入碱溶液将pH调节至3; 将混合溶液的温度升至90℃，并进一步加入碱溶液以将pH调节至7.5。 通过过滤回收所得沉淀物，脱水并干燥，得到含Sn的氢氧化物; 将氢氧化物放入管式炉中并在含有水蒸气和NH 3气体的氮气气氛中在600℃下烧制2小时，以制备长轴为0.041μm的板状Sn含量的In氧化物， 短轴为0.025 mum，长轴比为1.64。 通过将针状和颗粒状ITO颗粒以2:98至98:2的比例混合来提供SnO 2含量为2-20重量％的ITO粉末。 施加由该混合ITO粉末制备的涂布溶液，以提供具有10kOMEGA /平方或更小的薄层电阻，至少80％的透光率和不超过2％的雾度值的透明导电膜，
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