Apparatus, mold, and method for manufacturing metal-ceramic composite member
    1.
    发明申请
    Apparatus, mold, and method for manufacturing metal-ceramic composite member 有权
    用于制造金属 - 陶瓷复合材料的装置,模具和方法

    公开(公告)号:US20040123968A1

    公开(公告)日:2004-07-01

    申请号:US10659305

    申请日:2003-09-11

    IPC分类号: B32B015/04 B22D019/00

    摘要: To provide a manufacturing apparatus that is capable of manufacturing metal-ceramic composite members in various shapes with high productivity, and a mold member and a manufacturing method therefor. An apparatus for manufacturing a metal-ceramic composite member was made, the apparatus including: a plurality of process regions, namely, an atmosphere replacing/heating part 11, a molten metal push-out part 21, and a cooling part 31; and a guide 48 for allowing a mold to pass through these plural process regions, molds 60 having ceramic members 86 placed therein are successively inserted into a mold inlet 43 provided in this guide 48 to pass through the guide 48 practically in a shielded state from the atmosphere, a molten metal 53 is poured thereto in the molten-metal push-out part 21, and the molten metal 53 is cooled and solidified in the cooling part 31 to join a metal and a ceramic, thereby manufacturing the metal-ceramic composite member.

    摘要翻译: 提供能够以高生产率制造各种形状的金属陶瓷复合构件的制造装置,以及模具构件及其制造方法。 制造金属 - 陶瓷复合构件的制造装置,该装置包括:多个处理区域,即气氛置换/加热部件11,熔融金属推出部件21和冷却部件31; 以及用于允许模具通过这些多个处理区域的引导件48,其中放置有陶瓷构件86的模具60被连续地插入到设置在该引导件48中的模具入口43中,以实质上穿过引导件48处于屏蔽状态 在熔融金属推出部21中注入熔融金属53,在冷却部31中使熔融金属53冷却固化,使金属与陶瓷结合,由此制造金属 - 陶瓷复合部件 。

    Oxide superconductor thick film and method for manufacturing the same
    2.
    发明申请
    Oxide superconductor thick film and method for manufacturing the same 审中-公开
    氧化物超导体厚膜及其制造方法

    公开(公告)号:US20040110641A1

    公开(公告)日:2004-06-10

    申请号:US10630862

    申请日:2003-07-31

    IPC分类号: H01F006/00

    CPC分类号: H01L39/2429 Y10S505/782

    摘要: The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.

    摘要翻译: 本发明提供了一种Bi2223基厚膜,其在制造过程中间对基底或氧化物超导体厚膜等施加热或机械冲击时不会剥离,以及其制造方法 将具有Bi2212组成的混合比的氧化物超导体糊料1施加到基材3上,干燥,烧制,然后在接近其熔点的温度下烧制,得到部分熔融层4.接下来,将氧化物超导体糊料2 将Bi2223组合物的混合比施加到部分熔融层4上,通过CIP进行干燥,烧制,压缩,然后反复燃烧并压缩预定次数,得到其上形成有所需的超导体厚膜5的基材3。

    Apparatus for leaching zinc concentrates
    3.
    发明申请
    Apparatus for leaching zinc concentrates 审中-公开
    锌精矿浸出装置

    公开(公告)号:US20040065987A1

    公开(公告)日:2004-04-08

    申请号:US10681455

    申请日:2003-10-07

    IPC分类号: C22B003/04

    CPC分类号: C22B3/08 C22B19/22 Y02P10/234

    摘要: An apparatus for leaching zinc concentrates which comprises: a pressure vessel for charging therein a solution containing at least free sulfuric acid and iron ions, a stirrer which is disposed in the pressure vessel, an oxygen gas supply pipe that extends into the pressure vessel from the outside of the pressure vessel, the oxygen gas supply pipe having an oxygen gas inlet port which opens below the stirrer, and a discharge pipe through which an iron-containing, acidic solution or a slurry that results from the reaction of said solution containing at least free sulfuric acid and iron ions is discharged to the outside of the pressure vessel, the discharge pipe having a drain port which is open in a lower part of said pressure vessel.

    摘要翻译: 一种用于浸出锌精矿的设备,包括:用于在其中装入至少含有游离硫酸和铁离子的溶液的压力容器,设置在压力容器中的搅拌器,从气体供给管延伸到压力容器中的氧气供应管 在压力容器外部,氧气供给管具有在搅拌器下方开口的氧气入口,以及排出管,由至少含有至少包含所述溶液的溶液的反应产生的含铁酸性溶液或浆料 游离硫酸和铁离子被排放到压力容器的外部,排出管具有在所述压力容器的下部开口的排出口。

    Connector copper alloys and a process for producing the same
    4.
    发明申请
    Connector copper alloys and a process for producing the same 有权
    连接铜合金及其制造方法

    公开(公告)号:US20030129076A1

    公开(公告)日:2003-07-10

    申请号:US10252770

    申请日:2002-09-23

    IPC分类号: C22C009/04

    CPC分类号: C22C9/04

    摘要: Copper alloy having the basic composition CunullZnnullSn contains 23-28 wt % Zn and 0.3-1.8 wt % Sn and satisfies the relation 6.0null0.25XnullYnull8.5 (where X is the addition of Zn in wt % and Y is the addition of Sn in wt %). The alloy is cast into an ingot by melting and cooling over the range from the liquidus line to 600null C. at a rate of at least 50null C./min; the ingot is hot rolled at a temperature not higher than 900null C. and then subjected to repeated cycles of cold rolling and annealing at 300-650null C. to control the size of crystal grains, thereby producing a rolled strip having a 0.2% yield strength of at least 600 N/mm2, a tensile strength of at least 650 N/mm2, an electrical conductivity of at least 20% IACS, a Young's modulus of no more than 120 kN/mm2 and a percent stress relaxation of no more than 20%.

    摘要翻译: 具有Cu-Zn-Sn基本组成的铜合金含有23-28重量%的Zn和0.3-1.8重量%的Sn,满足关系式6.0 <= 0.25X + Y <= 8.5(其中X是以重量%计的Zn, Y为添加重量%的Sn)。 通过在液相线至600℃的范围内以至少50℃/ min的速率熔融和冷却将合金铸造成锭; 将锭在不高于900℃的温度下热轧,然后在300-650℃下进行冷轧和退火的重复循环,以控制晶粒的尺寸,由此制造具有0.2% 屈服强度为至少600N / mm 2,拉伸强度为至少650N / mm 2,电导率为至少20%IACS,杨氏模量不大于120kN / mm 2,应力松弛百分数不大于 超过20%。

    Tin-containing indium oxides, a process for producing them, a coating solution using them and electrically conductive coatings formed of them
    5.
    发明申请
    Tin-containing indium oxides, a process for producing them, a coating solution using them and electrically conductive coatings formed of them 有权
    含锡铟氧化物,其制造方法,使用它们的涂布溶液和由它们形成的导电涂层

    公开(公告)号:US20030030036A1

    公开(公告)日:2003-02-13

    申请号:US10108618

    申请日:2002-03-28

    IPC分类号: H01B001/00

    摘要: To a hydrochloric acid solution containing In and Sn and which is held at 20null C., an alkali solution is added to adjust pH to 3; the temperature of the mixed solution is raised to 90null C. and the alkali solution is further added to adjust pH to 7.5. The resulting precipitate is recovered by filtration, dehydrated and dried to yield a Sn-containing In hydroxide; the hydroxide is put into a tubular furnace and fired in a nitrogen gas atmosphere containing water vapor and NH3 gas at 600nullC. for 2 hours to produce a Sn-containing In oxide in the form of plates having a major axis of 0.041 nullm, a minor axis of 0.025 nullm and a major-to-minor axis ratio of 1.64. An ITO powder having a SnO2 content of 2-20 wt % is provided by mixing acicular and granular ITO particles in proportions within the range of from 2:98 to 98:2. A coating solution prepared from this mixed ITO powder is applied to provide a transparent conductive film having a sheet resistance of 10 knull/null or less, a light transmittance of at least 80%, and a haze value of no more than 2%.

    摘要翻译: 向含有In和Sn的盐酸溶液中保持20℃,加入碱溶液将pH调节至3; 将混合溶液的温度升至90℃,并进一步加入碱溶液以将pH调节至7.5。 通过过滤回收所得沉淀物,脱水并干燥,得到含Sn的氢氧化物; 将氢氧化物放入管式炉中并在含有水蒸气和NH 3气体的氮气气氛中在600℃下烧制2小时,以制备长轴为0.041μm的板状Sn含量的In氧化物, 短轴为0.025 mum,长轴比为1.64。 通过将针状和颗粒状ITO颗粒以2:98至98:2的比例混合来提供SnO 2含量为2-20重量%的ITO粉末。 施加由该混合ITO粉末制备的涂布溶液,以提供具有10kOMEGA /平方或更小的薄层电阻,至少80%的透光率和不超过2%的雾度值的透明导电膜,

    Copper powder and process for producing copper powder
    6.
    发明申请
    Copper powder and process for producing copper powder 有权
    铜粉和铜粉生产工艺

    公开(公告)号:US20030015062A1

    公开(公告)日:2003-01-23

    申请号:US10216750

    申请日:2002-08-13

    IPC分类号: B22F009/24 C22C009/00

    CPC分类号: H01G4/0085 B22F9/24

    摘要: A copper powder is provided that has an average particle diameter in the range of from not less than 0.1 nullm to less than 1.5 nullm, that has a narrow particle size distribution width whose value A defined by Equation (1) below in terms of X25, X50 and X75 defined below is not greater than 1.2, and that forms a pseudo-fused sintered product when held at a temperature of 800null C. under an atmosphere of inert gas at one atmosphere pressure: Anull(X75nullX25)/X50nullnull(1), where X25, X50 and X75 are values of particle diameter X corresponding to Q %null25%, 50% and 75% on a cumulative particle-size curve plotted in an orthogonal coordinate system whose abcissa represents particle diameter X (nullm) and ordinate represents Q % (ratio of particles present of a diameter not greater than the corresponding value of X; expressed in units of vol % of particles). The copper powder is produced by conducting wet reduction of cuprous oxide into metallic copper powder in the presence of ammonia or an ammonium salt. When used to form the terminal electrodes of multi-layer capacitor, it enables the electrodes to form into solid sintered bodies with few pores by sintering at a low temperature.

    摘要翻译: 提供了具有平均粒径在0.1μm以上且小于1.5μm的范围内的铜粉末,其具有窄的粒度分布宽度,其由以下等式(1)定义的值为X25, 下面定义的X50和X75不大于1.2,并且当在一个大气压力的惰性气体气氛下在800℃的温度下保持时形成假熔融烧结产品:<段落lvl =“0”> < 在线式> A =(X75-X25)/ X50(1),其中X25,X50和X75是对应于Q%= 25%,50%的粒径X的值, 在正交坐标系中绘制的累积粒度曲线为75%,其中阿克西标记表示粒径X(母体),纵坐标表示Q%(直径不大于X的对应值的粒子的比例;以单位为单位表示 体积%的颗粒)。 通过在氨或铵盐的存在下将氧化亚铜湿法还原成金属铜粉来制造铜粉末。 当用于形成多层电容器的端子电极时,通过在低温下烧结,能够使电极形成具有少孔的固体烧结体。

    High purity gallium for producing compound semiconductor, refining process and apparatus for the same
    7.
    发明申请
    High purity gallium for producing compound semiconductor, refining process and apparatus for the same 审中-公开
    用于生产化合物半导体的高纯度镓,精炼工艺及其设备

    公开(公告)号:US20020162419A1

    公开(公告)日:2002-11-07

    申请号:US10134381

    申请日:2002-04-30

    摘要: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

    摘要翻译: 在从含有杂质的原料镓材料中分离杂质的方法中,提炼镓的方法包括在搅拌的同时逐渐固化容器内液态的原料镓材料,使得管状凝固界面的直径从 容器的内壁平面朝向容器的中心,以减小管状凝固边界的直径,并且在容器内部的整个原料固化之前将残留在容器的中心部分的液相与固化相分离 。 根据需要,通过使用分离液相的凝固相作为原料镓材料来重复上述过程。 可以通过分析从凝固层分离的杂质浓缩的Ga的杂质浓度来获得有利地用于制备化合物半导体的金属镓。

    Copper powder and process for producing copper powder
    8.
    发明申请
    Copper powder and process for producing copper powder 审中-公开
    铜粉和铜粉生产工艺

    公开(公告)号:US20010002558A1

    公开(公告)日:2001-06-07

    申请号:US09726379

    申请日:2000-12-01

    IPC分类号: H01G009/00 B22F009/00

    CPC分类号: H01G4/0085 B22F9/24

    摘要: A copper powder is provided that has an average particle diameter in the range of from not less than 0.1 nullm to less than 1.5 nullm, that has a narrow particle size distribution width whose value A defined by Equation (1) below in terms of X25, X50 and X75 defined below is not greater than 1.2, and that forms a pseudo-fused sintered product when held at a temperature of 800null C. under an atmosphere of inert gas at one atmosphere pressure: Anull(X75nullX25)/X50nullnull(1), where X25, X50 and X75 are values of particle diameter X corresponding to Q% null25%, 50% and 75% on a cumulative particle-size curve plotted in an orthogonal coordinate system whose abcissa represents particle diameter X (nullm) and ordinate represents Q% (ratio of particles present of a diameter not greater than the corresponding value of X; expressed in units of vol % of particles). The copper powder is produced by conducting wet reduction of cuprous oxide into metallic copper powder in the presence of ammonia or an ammonium salt. When used to form the terminal electrodes of multi-layer capacitor, it enables the electrodes to form into solid sintered bodies with few pores by sintering at a low temperature.

    摘要翻译: 提供了具有平均粒径在0.1μm以上且小于1.5μm的范围内的铜粉末,其具有窄的粒度分布宽度,其由以下等式(1)定义的值为X25, 下面定义的X50和X75不大于1.2,并且当在一个大气压力的惰性气体气氛下在800℃的温度下保持时形成假熔融烧结产品:<段落lvl =“0”> < 在线式> A =(X75-X25)/ X50(1),其中X25,X50和X75是对应于Q%= 25%,50%的粒径X的值, 在正交坐标系中绘制的累积粒度曲线为75%,其中阿克西标记表示粒径X(母体),纵坐标表示Q%(直径不大于X的对应值的粒子的比例;以单位为单位表示 体积%的颗粒)。 通过在氨或铵盐的存在下将氧化亚铜湿法还原成金属铜粉来制造铜粉末。 当用于形成多层电容器的端子电极时,通过在低温下烧结,能够使电极形成具有少孔的固体烧结体。

    High purity metals, process and apparatus for producing them by enhanced purification
    10.
    发明申请
    High purity metals, process and apparatus for producing them by enhanced purification 有权
    高纯度金属,通过增强净化生产它们的方法和设备

    公开(公告)号:US20030145684A1

    公开(公告)日:2003-08-07

    申请号:US10112363

    申请日:2002-03-29

    IPC分类号: C22B019/16 C22B026/22

    摘要: In a purification apparatus comprising a vertical stack of a feed heating zone having the feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7, a feed metal, preferably with a purity of at least 3N, is charged into the feed crucible 1 in a vacuum atmosphere, preferably at no more than 13 Pa (10null1 Torr), with the feed crucible 1 and the condensation vapor passage plates 5 being heated at controlled temperatures to generate the vapor of the metal in the feed heating zone; part of the metal vapor is condensed to form a molten condensate which is returned into the feed crucible 1, thereby; the process solidifying the high-purity metal in the solidification zone; the solidified metal has a purity of at least 6N and contains Cl, F and S in a respective amount of no more than 0.1 ppm with a total impurity content of no more than 1 ppm.

    摘要翻译: 在包括具有进料坩埚1的进料加热区的垂直堆叠的净化装置中,具有多个冷凝蒸气通道板5的冷凝区,具有固化坩埚2的固化区和具有多个 夹带/凝固蒸汽通道板7,优选纯度为至少3N的进料金属在真空气氛中,优选不超过13Pa(10-1乇),与进料 坩埚1和冷凝蒸汽通道板5在受控温度下加热,以在进料加热区产生金属的蒸气; 金属蒸汽的一部分被冷凝以形成熔融冷凝物,其返回到进料坩埚1中; 该工艺在固化区固化高纯度金属; 固化金属的纯度至少为6N,并且含有不大于0.1ppm的Cl,F和S,总杂质含量不大于1ppm。