摘要:
To provide a manufacturing apparatus that is capable of manufacturing metal-ceramic composite members in various shapes with high productivity, and a mold member and a manufacturing method therefor. An apparatus for manufacturing a metal-ceramic composite member was made, the apparatus including: a plurality of process regions, namely, an atmosphere replacing/heating part 11, a molten metal push-out part 21, and a cooling part 31; and a guide 48 for allowing a mold to pass through these plural process regions, molds 60 having ceramic members 86 placed therein are successively inserted into a mold inlet 43 provided in this guide 48 to pass through the guide 48 practically in a shielded state from the atmosphere, a molten metal 53 is poured thereto in the molten-metal push-out part 21, and the molten metal 53 is cooled and solidified in the cooling part 31 to join a metal and a ceramic, thereby manufacturing the metal-ceramic composite member.
摘要:
The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.
摘要:
An apparatus for leaching zinc concentrates which comprises: a pressure vessel for charging therein a solution containing at least free sulfuric acid and iron ions, a stirrer which is disposed in the pressure vessel, an oxygen gas supply pipe that extends into the pressure vessel from the outside of the pressure vessel, the oxygen gas supply pipe having an oxygen gas inlet port which opens below the stirrer, and a discharge pipe through which an iron-containing, acidic solution or a slurry that results from the reaction of said solution containing at least free sulfuric acid and iron ions is discharged to the outside of the pressure vessel, the discharge pipe having a drain port which is open in a lower part of said pressure vessel.
摘要:
Copper alloy having the basic composition CunullZnnullSn contains 23-28 wt % Zn and 0.3-1.8 wt % Sn and satisfies the relation 6.0null0.25XnullYnull8.5 (where X is the addition of Zn in wt % and Y is the addition of Sn in wt %). The alloy is cast into an ingot by melting and cooling over the range from the liquidus line to 600null C. at a rate of at least 50null C./min; the ingot is hot rolled at a temperature not higher than 900null C. and then subjected to repeated cycles of cold rolling and annealing at 300-650null C. to control the size of crystal grains, thereby producing a rolled strip having a 0.2% yield strength of at least 600 N/mm2, a tensile strength of at least 650 N/mm2, an electrical conductivity of at least 20% IACS, a Young's modulus of no more than 120 kN/mm2 and a percent stress relaxation of no more than 20%.
摘要翻译:具有Cu-Zn-Sn基本组成的铜合金含有23-28重量%的Zn和0.3-1.8重量%的Sn,满足关系式6.0 <= 0.25X + Y <= 8.5(其中X是以重量%计的Zn, Y为添加重量%的Sn)。 通过在液相线至600℃的范围内以至少50℃/ min的速率熔融和冷却将合金铸造成锭; 将锭在不高于900℃的温度下热轧,然后在300-650℃下进行冷轧和退火的重复循环,以控制晶粒的尺寸,由此制造具有0.2% 屈服强度为至少600N / mm 2,拉伸强度为至少650N / mm 2,电导率为至少20%IACS,杨氏模量不大于120kN / mm 2,应力松弛百分数不大于 超过20%。
摘要:
To a hydrochloric acid solution containing In and Sn and which is held at 20null C., an alkali solution is added to adjust pH to 3; the temperature of the mixed solution is raised to 90null C. and the alkali solution is further added to adjust pH to 7.5. The resulting precipitate is recovered by filtration, dehydrated and dried to yield a Sn-containing In hydroxide; the hydroxide is put into a tubular furnace and fired in a nitrogen gas atmosphere containing water vapor and NH3 gas at 600nullC. for 2 hours to produce a Sn-containing In oxide in the form of plates having a major axis of 0.041 nullm, a minor axis of 0.025 nullm and a major-to-minor axis ratio of 1.64. An ITO powder having a SnO2 content of 2-20 wt % is provided by mixing acicular and granular ITO particles in proportions within the range of from 2:98 to 98:2. A coating solution prepared from this mixed ITO powder is applied to provide a transparent conductive film having a sheet resistance of 10 knull/null or less, a light transmittance of at least 80%, and a haze value of no more than 2%.
摘要:
A copper powder is provided that has an average particle diameter in the range of from not less than 0.1 nullm to less than 1.5 nullm, that has a narrow particle size distribution width whose value A defined by Equation (1) below in terms of X25, X50 and X75 defined below is not greater than 1.2, and that forms a pseudo-fused sintered product when held at a temperature of 800null C. under an atmosphere of inert gas at one atmosphere pressure: Anull(X75nullX25)/X50nullnull(1), where X25, X50 and X75 are values of particle diameter X corresponding to Q %null25%, 50% and 75% on a cumulative particle-size curve plotted in an orthogonal coordinate system whose abcissa represents particle diameter X (nullm) and ordinate represents Q % (ratio of particles present of a diameter not greater than the corresponding value of X; expressed in units of vol % of particles). The copper powder is produced by conducting wet reduction of cuprous oxide into metallic copper powder in the presence of ammonia or an ammonium salt. When used to form the terminal electrodes of multi-layer capacitor, it enables the electrodes to form into solid sintered bodies with few pores by sintering at a low temperature.
摘要:
In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.
摘要:
A copper powder is provided that has an average particle diameter in the range of from not less than 0.1 nullm to less than 1.5 nullm, that has a narrow particle size distribution width whose value A defined by Equation (1) below in terms of X25, X50 and X75 defined below is not greater than 1.2, and that forms a pseudo-fused sintered product when held at a temperature of 800null C. under an atmosphere of inert gas at one atmosphere pressure: Anull(X75nullX25)/X50nullnull(1), where X25, X50 and X75 are values of particle diameter X corresponding to Q% null25%, 50% and 75% on a cumulative particle-size curve plotted in an orthogonal coordinate system whose abcissa represents particle diameter X (nullm) and ordinate represents Q% (ratio of particles present of a diameter not greater than the corresponding value of X; expressed in units of vol % of particles). The copper powder is produced by conducting wet reduction of cuprous oxide into metallic copper powder in the presence of ammonia or an ammonium salt. When used to form the terminal electrodes of multi-layer capacitor, it enables the electrodes to form into solid sintered bodies with few pores by sintering at a low temperature.
摘要:
A high-purity metal (such as magnesium or zinc) containing Cl, F and S in a respective amount of no more than 0.1 ppm, with the total impurity content being no more than 1 ppm.
摘要:
In a purification apparatus comprising a vertical stack of a feed heating zone having the feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7, a feed metal, preferably with a purity of at least 3N, is charged into the feed crucible 1 in a vacuum atmosphere, preferably at no more than 13 Pa (10null1 Torr), with the feed crucible 1 and the condensation vapor passage plates 5 being heated at controlled temperatures to generate the vapor of the metal in the feed heating zone; part of the metal vapor is condensed to form a molten condensate which is returned into the feed crucible 1, thereby; the process solidifying the high-purity metal in the solidification zone; the solidified metal has a purity of at least 6N and contains Cl, F and S in a respective amount of no more than 0.1 ppm with a total impurity content of no more than 1 ppm.