公开(公告)号：US20090166810A1

公开(公告)日：2009-07-02

申请号：US11965849

申请日：2007-12-28

申请人： Daniel Joseph Stillman ,  Charles Anthony Odegard ,  Gregory Barton Hotchkiss ,  Richard Willson Arnold

发明人： Daniel Joseph Stillman ,  Charles Anthony Odegard ,  Gregory Barton Hotchkiss ,  Richard Willson Arnold

IPC分类号： H01L23/544 ,  H01L21/71

CPC分类号： H01L23/562 ,  H01L21/78 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to microelectronic semiconductor devices, and to mass-production of the same on semiconductor wafers with novel crack-deflecting structures and methods. According to the invention, a semiconductor device includes an active circuit area surrounded by an inactive area and circumscribed with a bulwark having a crack-deflecting face oriented toward the periphery of the device. Embodiments of the invention are disclosed, in which a semiconductor device, or multiple devices on a wafer, include bulwarks having series of minor arcs with their chords oriented toward the peripheries of the devices. Additional embodiments of the invention described include bulwarks having series of right angles oriented toward the peripheries of the devices. Examples of the invention also include preferred embodiments wherein the bulwarks further comprise series of discrete pickets, parallel bulwarks, and bulwarks in combination with scribe seals.

摘要翻译： 本发明涉及微电子半导体器件，并且通过新的裂纹偏转结构和方法在半导体晶片上批量生产它们。 根据本发明，半导体器件包括由非活性区域包围的有源电路区域，并且与具有朝向器件周边定向的裂纹偏转面的舷墙外接。 公开了本发明的实施例，其中半导体器件或晶片上的多个器件包括具有一系列小弧的舷墙，其小弦弧朝向器件的周边方向。 所描述的本发明的另外的实施例包括具有朝向装置的周边的一系列直角的舷墙。 本发明的实例还包括优选实施例，其中舷墙还包括一系列分立的桩，平行的舷墙和舷墙以及划线密封。