公开(公告)号：US20090166810A1

公开(公告)日：2009-07-02

申请号：US11965849

申请日：2007-12-28

申请人： Daniel Joseph Stillman ,  Charles Anthony Odegard ,  Gregory Barton Hotchkiss ,  Richard Willson Arnold

发明人： Daniel Joseph Stillman ,  Charles Anthony Odegard ,  Gregory Barton Hotchkiss ,  Richard Willson Arnold

IPC分类号： H01L23/544 ,  H01L21/71

CPC分类号： H01L23/562 ,  H01L21/78 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to microelectronic semiconductor devices, and to mass-production of the same on semiconductor wafers with novel crack-deflecting structures and methods. According to the invention, a semiconductor device includes an active circuit area surrounded by an inactive area and circumscribed with a bulwark having a crack-deflecting face oriented toward the periphery of the device. Embodiments of the invention are disclosed, in which a semiconductor device, or multiple devices on a wafer, include bulwarks having series of minor arcs with their chords oriented toward the peripheries of the devices. Additional embodiments of the invention described include bulwarks having series of right angles oriented toward the peripheries of the devices. Examples of the invention also include preferred embodiments wherein the bulwarks further comprise series of discrete pickets, parallel bulwarks, and bulwarks in combination with scribe seals.

摘要翻译： 本发明涉及微电子半导体器件，并且通过新的裂纹偏转结构和方法在半导体晶片上批量生产它们。 根据本发明，半导体器件包括由非活性区域包围的有源电路区域，并且与具有朝向器件周边定向的裂纹偏转面的舷墙外接。 公开了本发明的实施例，其中半导体器件或晶片上的多个器件包括具有一系列小弧的舷墙，其小弦弧朝向器件的周边方向。 所描述的本发明的另外的实施例包括具有朝向装置的周边的一系列直角的舷墙。 本发明的实例还包括优选实施例，其中舷墙还包括一系列分立的桩，平行的舷墙和舷墙以及划线密封。

公开(公告)号：US06432744B1

公开(公告)日：2002-08-13

申请号：US09183980

申请日：1998-10-31

申请人： Gonzalo Amador ,  Gregory Barton Hotchkiss ,  Katherine G. Heinen

发明人： Gonzalo Amador ,  Gregory Barton Hotchkiss ,  Katherine G. Heinen

IPC分类号： H01L2144

CPC分类号： H01L24/81 ,  H01L21/4846 ,  H01L21/50 ,  H01L24/11 ,  H01L24/75 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/7526 ,  H01L2224/81048 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3457 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： A wafer-scale assembly apparatus for integrated circuits and method for forming the wafer-scale assembly. A semiconductor wafer including a plurality of circuits is provided with a plurality of metal contact pads as electrical entry and exit ports. A first wafer-scale patterned polymer film carrying solder balls for each of the contact pads on the wafer is positioned opposite the wafer, and the wafer and the film are aligned. The film is brought into contact with the wafer. Radiant energy in the near infrared spectrum is applied to the backside of the wafer, heating the wafer uniformly and rapidly without moving the semiconductor wafer. Thermal energy is transferred through the wafer to the surface of the wafer and into the solder balls, which reflow onto the contact pads, while the thermal stretching of the polymer film is mechanically compensated. The uniformity of the height of the liquid solder balls is controlled either by mechanical stoppers or by the precision linear motion of motors. After cooling, the solder balls solidify and the first polymer film is removed.

摘要翻译： 用于集成电路的晶片级组装装置和用于形成晶片级组件的方法。 包括多个电路的半导体晶片设置有多个金属接触垫作为电子入口和出口。 承载用于晶片上的每个接触焊盘的焊球的第一晶片级图案化聚合物膜与晶片相对定位，并且晶片和膜对准。 使膜与晶片接触。 将近红外光谱中的辐射能量施加到晶片的背面，均匀且快速地加热晶片而不移动半导体晶片。 热能通过晶片转移到晶片的表面并进入焊球，该焊球回流到接触焊盘上，同时机械补偿聚合物膜的热拉伸。 液体焊球的高度的均匀性由机械塞子或电动机的精密线性运动控制。 冷却后，焊球固化并除去第一聚合物膜。