公开(公告)号：US20060062054A1

公开(公告)日：2006-03-23

申请号：US10946809

申请日：2004-09-22

申请人： Darlene Hamilton ,  Fatima Bathul ,  Masato Horiike ,  Eugen Gershon ,  Michael Buskirk

发明人： Darlene Hamilton ,  Fatima Bathul ,  Masato Horiike ,  Eugen Gershon ,  Michael Buskirk

IPC分类号： G11C7/06 ,  G11C11/34

CPC分类号： G11C11/5671 ,  G11C16/0475 ,  G11C16/34 ,  G11C16/3418 ,  G11C2211/5634

摘要： The present invention pertains to a technique for determining the level of a bit in a dual sided ONO flash memory cell where each of the bits of the dual sided ONO flash memory cell can be programmed to multiple levels. One or more aspects of the present invention take into consideration the affect that the level of charge on one bit can have on the other bit, otherwise known as complimentary bit disturb. A metric known as transconductance is utilized in making the bit level determination to provide a greater degree of resolution and accuracy. In this manner, determining the bit level in accordance with one or more aspects of the present invention mitigates false or erroneous reads.

摘要翻译： 本发明涉及用于确定双面ONO闪速存储器单元中的位的电平的技术，其中双面ONO闪存单元的每个位可以被编程为多个电平。 本发明的一个或多个方面考虑到一位上的电荷电平对另一位可能具有的影响，或称为互补位干扰的影响。 被称为跨导的度量被用于使位电平确定提供更大程度的分辨率和精度。 以这种方式，根据本发明的一个或多个方面确定比特级别减轻了错误或错误的读取。