Structure for differential eFUSE sensing without reference fuses
    1.
    发明授权
    Structure for differential eFUSE sensing without reference fuses 有权
    不带参考保险丝的差分eFUSE检测结构

    公开(公告)号:US07688654B2

    公开(公告)日:2010-03-30

    申请号:US11769925

    申请日:2007-06-28

    IPC分类号: G11C11/063

    CPC分类号: G11C17/16 G11C17/18

    摘要: A design structure comprising a differential fuse sensing system, which includes a fuse leg configured for introducing a sense current through an electrically programmable fuse (eFUSE) to be sensed, and a differential sense amplifier having a first input node coupled to the fuse leg and a second node coupled to a reference voltage. The fuse leg further includes a current supply device controlled by a variable reference current generator configured to generate an output signal therefrom such that the voltage on the first input node of the sense amplifier is equal to the voltage on the second input node of the sense amplifier whenever the resistance value of the eFUSE is equal to the resistance value of a programmable variable resistance device included within the variable reference current generator.

    摘要翻译: 一种设计结构,包括差分熔丝感测系统,其包括被配置用于通过要被感测的电可编程熔丝(eFUSE)引入感测电流的熔丝腿,以及具有耦合到保险丝腿的第一输入节点的差分读出放大器和 耦合到参考电压的第二节点。 保险丝腿还包括由可变参考电流发生器控制的电流供应装置,其被配置为从其产生输出信号,使得读出放大器的第一输入节点上的电压等于读出放大器的第二输入节点上的电压 每当eFUSE的电阻值等于包括在可变参考电流发生器内的可编程可变电阻器件的电阻值时。

    STRUCTURE FOR DIFFERENTIAL EFUSE SENSING WITHOUT REFERENCE FUSES
    2.
    发明申请
    STRUCTURE FOR DIFFERENTIAL EFUSE SENSING WITHOUT REFERENCE FUSES 有权
    不参考熔丝的不同EFEX感应结构

    公开(公告)号:US20080001251A1

    公开(公告)日:2008-01-03

    申请号:US11769925

    申请日:2007-06-28

    IPC分类号: H01L29/00

    CPC分类号: G11C17/16 G11C17/18

    摘要: A design structure comprising a differential fuse sensing system, which includes a fuse leg configured for introducing a sense current through an electrically programmable fuse (eFUSE) to be sensed, and a differential sense amplifier having a first input node coupled to the fuse leg and a second node coupled to a reference voltage. The fuse leg further includes a current supply device controlled by a variable reference current generator configured to generate an output signal therefrom such that the voltage on the first input node of the sense amplifier is equal to the voltage on the second input node of the sense amplifier whenever the resistance value of the eFUSE is equal to the resistance value of a programmable variable resistance device included within the variable reference current generator.

    摘要翻译: 一种设计结构,包括差分熔丝感测系统,其包括被配置用于通过要被感测的电可编程熔丝(eFUSE)引入感测电流的熔丝腿,以及具有耦合到保险丝腿的第一输入节点的差分读出放大器和 耦合到参考电压的第二节点。 保险丝腿还包括由可变参考电流发生器控制的电流供应装置,其被配置为从其产生输出信号,使得读出放大器的第一输入节点上的电压等于读出放大器的第二输入节点上的电压 每当eFUSE的电阻值等于包括在可变参考电流发生器内的可编程可变电阻器件的电阻值时。

    Structure for increasing fuse programming yield
    3.
    发明授权
    Structure for increasing fuse programming yield 有权
    提高保险丝编程产量的结构

    公开(公告)号:US07895028B2

    公开(公告)日:2011-02-22

    申请号:US11775531

    申请日:2007-07-10

    IPC分类号: G06F17/50

    摘要: A design structure which enables e-fuse memory repair. The design structure uses a compressed bit string to generate another bit string based on a select value. The select value provides instructions to an encoding logic element, which generates a second bit string. For example, the select value may instruct the encoding logic to create a duplicate copy of each bit in the compressed bit string to generate a 2n-bit string. Once the fuses are programmed using the second bit string, the fuse values are read out as a third string, which is decoded by a decoding logic element according to the select value, thereby improving memory repair.

    摘要翻译: 一种能够进行电子保险丝内存修复的设计结构。 设计结构使用压缩比特串根据选择值生成另一个比特串。 该选择值向编码逻辑元件提供指令,该编码逻辑元件产生第二位串。 例如,选择值可以指示编码逻辑在压缩比特串中创建每个比特的重复副本以生成2n比特串。 一旦使用第二位串编程熔丝,则将熔丝值作为第三串读出,其由解码逻辑元件根据选择值解码,从而改善存储器修复。

    Method and apparatus for increasing fuse programming yield through preferred use of duplicate data
    4.
    发明授权
    Method and apparatus for increasing fuse programming yield through preferred use of duplicate data 有权
    通过优选使用重复数据来增加保险丝编程产量的方法和装置

    公开(公告)号:US07251756B2

    公开(公告)日:2007-07-31

    申请号:US10908033

    申请日:2005-04-26

    IPC分类号: G11C29/00

    摘要: Integrated circuit memory is tested to discover defective memory elements. To replace the defective memory elements, spare memory elements are selected and a string is generated to indicate which ones of the spares replace which ones of the defective memory elements. The number of bits of the string depend upon how many of the memory elements are defective. Although a certain number of the memory elements are defective, which determines the number of the string bits, nevertheless, a number of fuses to program on the integrated circuit is determined responsive to how many fuses are available for programming relative to the number of the binary string bits. That is, if more fuses are available than a certain threshold number relative to the number of string bits (as is preferred), then more than the threshold number are programmed. If not, then only that certain threshold number of fuses are programmed.

    摘要翻译: 测试集成电路存储器以发现有缺陷的存储器元件。 为了更换有缺陷的存储器元件,选择备用存储器元件,并且生成字符串以指示哪些备用件替换有缺陷存储器元件中的哪一个。 字符串的位数取决于多少存储器元件有缺陷。 尽管一定数量的存储器元件是有缺陷的,这确定了串比特的数目,然而,确定集成电路上编程的多个保险丝的响应是相对于二进制数的编号有多少个熔丝可用于编程 字符串位。 也就是说,如果比相对于字符串位数(优选的)更多的保险丝可用于某个阈值数,则多于阈值编号。 如果没有,那么只有该阈值数量的保险丝被编程。