公开(公告)号：US07186644B2

公开(公告)日：2007-03-06

申请号：US11026984

申请日：2004-12-30

申请人： Date Gun Lee

发明人： Date Gun Lee

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76807 ,  H01L21/76838

摘要： Methods of preventing oxidation of a copper interconnect of a semiconductor device are disclosed. An example method forms a lower copper interconnect on a substrate having at least one predetermined structure, deposits a nitride layer on the lower copper interconnect and on the substrate, and sequentially depositing a first insulating layer, an etch-stop layer, and a second insulating layer on the nitride layer. The example method also forms a trench and a via hole through the second insulating layer and the first insulating layer by using a dual damascene process, etches the nitride layer so as to expose some portion of the lower copper interconnect, and supplies combining gas onto the exposed portion of the lower copper interconnect.

摘要翻译： 公开了防止半导体器件的铜互连的氧化的方法。 一种示例性方法在具有至少一个预定结构的衬底上形成较低的铜互连，在下铜互连和衬底上沉积氮化物层，并依次沉积第一绝缘层，蚀刻停止层和第二绝缘层 层。 该示例性方法还通过使用双镶嵌工艺形成穿过第二绝缘层和第一绝缘层的沟槽和通孔，蚀刻氮化物层以暴露下部铜互连的一些部分，并将合并气体供应到 下部铜互连的露出部分。