公开(公告)号：US20060209587A1

公开(公告)日：2006-09-21

申请号：US11266776

申请日：2005-11-03

申请人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Peter Clausen ,  Daniel Gryko

发明人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Peter Clausen ,  Daniel Gryko

IPC分类号： G11C11/00

CPC分类号： H01L51/0078 ,  B82Y10/00 ,  B82Y30/00 ,  C07D487/22 ,  C07D519/00 ,  C07F17/02 ,  G11B9/14 ,  G11B9/149 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/77 ,  H01L27/28 ,  H01L51/0077 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/0595

摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

摘要翻译： 本发明提供了可提供高存储密度（例如，10位/ cm 3以上）的可电寻址以允许有效读取和写入的新型高密度存储器件，该 提供高度的容错性，并且适合高效的化学合成和芯片制造。 器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。 在优选实施例中，该装置包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。