Abstract:
A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, a first passivation layer, a first electrode metal layer, and a second electrode metal layer. The n-type semiconductor layer is disposed above the substrate, and comprises a metal oxide material. The p-type semiconductor layer is disposed above the substrate, and comprises an organic semiconductor material. The first passivation layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, and formed with at least one contacting hole. The first electrode metal layer and the second electrode metal layer are electrically connected with each other through the contacting hole.
Abstract:
A pixel circuit, a drive method, a display panel and a display device are provided. A switch transistor is arranged between a first power supply signal and an input terminal (a source) of a drive transistor. When a drive circuit is at a second detection period during which drive current of a light emitting element is detected, the switch transistor is controlled to be turned off, such that the first power supply signal is disconnected from the source of the drive transistor. In this case, no current flows through the light emitting element, and therefore the light emitting element does not emit light, thereby solving a problem in the conventional technology that the light emitting element is lighted and it is not dark in a dark state when drive current of the pixel circuit is detected.
Abstract:
A variable transmission display comprises an electrophoretic medium having electrically charged particles dispersed in a fluid, the electrophoretic medium being capable of assuming a light-transmissive state and a substantially non-light-transmissive state; a light-transmissive first electrode disposed adjacent one side of the electrophoretic medium; light-transmissive second electrodes disposed adjacent the other side of the electrophoretic medium; and voltage means for varying the potential each of the second electrodes independently of one another.
Abstract:
A rectifying antenna device is disclosed. The device comprises a pair of electrode structures, and at least one nanostructure diode contacting at least a first electrode structure of the pair and being at least in proximity to a second electrode structure of the pair. At least one electrode structure of the pair receives AC radiation, and the nanostructure diode(s) at least partially rectifies a current generated by the AC radiation.
Abstract:
An organic light emitting diode (OLED) display includes: a substrate including a plurality of organic light emitting elements; an adhesive member on at least a portion of an upper surface of the substrate; a flexible circuit board adhered to the upper surface of the adhesive member and having a portion bent to be mounted to a lower surface of the substrate; and a light blocking member at the upper surface of the substrate, wherein the light blocking member is laterally offset from the adhesive member.
Abstract:
An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.
Abstract:
An image sensor is provided. The image sensor includes an interlayered dielectric structure having a first recess region, in which an organic photoelectric layer is provided, and a second recess region, in which a color filter is provided. The second recess region may be provided under the first recess region.
Abstract:
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
Abstract:
A circuit board includes: a first wiring layer provided on a substrate; an insulating layer including an opening, the insulating layer being provided on the first wiring layer; a surface-energy control layer provided in a region opposed to the opening of the insulating layer on the first wiring layer, the surface-energy control layer controlling surface energy of the first wiring layer; a semiconductor layer provided in a selective region on the insulating layer; and a second wiring layer on the insulating layer, the second wiring layer being electrically connected to the semiconductor layer, and being electrically connected to the first wiring layer through the opening.
Abstract:
An organic layer deposition apparatus, a method of manufacturing an organic light-emitting display device by using the same, and an organic light-emitting display device manufactured using the method, and in particular, an organic layer deposition apparatus that is suitable for use in the mass production of a large substrate and enables high-definition patterning, a method of manufacturing an organic light-emitting display device by using the same, and an organic light-emitting display device manufactured using the method.