公开(公告)号：US6132632A

公开(公告)日：2000-10-17

申请号：US927186

申请日：1997-09-11

申请人： David Emery Haney ,  Robert James Huber ,  Cherngye Hwang ,  Diana Perez ,  John Wesley Williams

发明人： David Emery Haney ,  Robert James Huber ,  Cherngye Hwang ,  Diana Perez ,  John Wesley Williams

IPC分类号： H01J37/32 ,  C23C16/00 ,  B44C1/22

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A method and apparatus for achieving etch rate uniformity in a reactive ion etcher. The reactive ion etcher generates a plasma within a vacuum chamber for etching a substrate disposed at a cathode of a reactor can within the chamber wherein the plasma emanates from a top plate of the reactor can, and is influenced by localized magnetic fields for locally controlling etch rates across the cathode to produce a uniform etch rate distribution across the cathode as a result of the localized magnetic field. The magnet array may be disposed between the top plate and the vacuum chamber for providing the localized magnetic fields. The magnet array includes a plurality of individual magnets and a grid plate for holding the individual magnets in position.

摘要翻译： 用于实现反应离子蚀刻器中的蚀刻速率均匀性的方法和装置。 反应离子蚀刻器在真空室内产生等离子体，用于蚀刻设置在室内的反应器罐的阴极处的衬底，其中等离子体从反应器的顶板发出的等离子体可以被局部磁场影响，用于局部控制蚀刻 由于局部磁场，整个阴极的速率跨越阴极产生均匀的蚀刻速率分布。 磁体阵列可以设置在顶板和真空室之间，用于提供局部磁场。 磁体阵列包括多个独立的磁体和用于将各个磁体保持就位的格板。