Wafer level hermetic bond using metal alloy
    1.
    发明申请
    Wafer level hermetic bond using metal alloy 审中-公开
    晶圆级密封用金属合金

    公开(公告)号:US20070048887A1

    公开(公告)日:2007-03-01

    申请号:US11211622

    申请日:2005-08-26

    IPC分类号: H01L21/00

    摘要: Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the metal layers. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.

    摘要翻译: 用于形成封装的MEMS器件的系统和方法包括密封两个衬底之间的绝缘气体的气密密封件,其中之一支撑MEMS器件。 可以通过加热至少两个金属层来形成气密密封,以便熔化至少一个金属层。 第一熔化的金属材料流入并与第二金属材料形成合金,形成封装MEMS装置的气密密封。

    Wafer level hermetic bond using metal alloy with raised feature
    2.
    发明申请
    Wafer level hermetic bond using metal alloy with raised feature 有权
    使用具有凸起特征的金属合金的晶圆级密封

    公开(公告)号:US20070048898A1

    公开(公告)日:2007-03-01

    申请号:US11304601

    申请日:2005-12-16

    IPC分类号: H01L21/00

    摘要: Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometries for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.

    摘要翻译: 用于形成封装装置的系统和方法包括密封两个基板之间的绝缘环境的气密密封件,其中之一支撑该装置。 气密密封是由两个金属层的合金形成的,一个沉积在第一基板上,另一个沉积在第二基板上,以及形成在第一或第二基板上的凸起特征。 至少一个金属层可以在凸起特征上保形地沉积。 凸起的特征​​在形成合金期间渗透第一或第二金属层的熔融材料,并且作为与凸起特征的距离的函数产生用于形成所需合金的化学计量谱。 在与凸起特征相距一定距离处,存在第一金属与第二金属的适当比率以形成优选化学计量的合金。

    Elastic interface for wafer bonding apparatus
    3.
    发明申请
    Elastic interface for wafer bonding apparatus 有权
    晶圆接合装置弹性界面

    公开(公告)号:US20070181633A1

    公开(公告)日:2007-08-09

    申请号:US11347219

    申请日:2006-02-06

    申请人: David Erlach

    发明人: David Erlach

    IPC分类号: B23K37/00 B23K5/00

    摘要: An apparatus for bonding a lid wafer to a device wafer includes an elastic interface having a first surface and a second surface. Relieved areas may be created in the elastic interface by removing at least some of the elastic material of the interface, leaving a mesh with nodes. Raised areas may be disposed on the nodes in staggered positions on the first surface relative to the second surface. The bonding pressure deflects the raised features on the first surface in one direction and the raised features on the second surface in another direction. The restoring force of the mesh transmits the pressure through the interface and to a lid wafer and a device wafer, to bond the lid wafer to the device wafer.

    摘要翻译: 用于将盖晶片接合到器件晶片的装置包括具有第一表面和第二表面的弹性界面。 可以通过移除界面中的至少一些弹性材料而在弹性界面中产生缓解区域,留下与节点的网格。 凸起区域可以相对于第二表面设置在第一表面上的交错位置的节点上。 接合压力使一个方向上的第一表面上的凸起特征偏转,并且在另一个方向上将第二表面上的凸起特征偏转。 网的恢复力将压力通过界面传递到盖晶片和器件晶片,以将盖晶片接合到器件晶片。