公开(公告)号：US20100009528A1

公开(公告)日：2010-01-14

申请号：US12259095

申请日：2008-10-27

申请人： David GAO ,  Fumitake Mieno

发明人： David GAO ,  Fumitake Mieno

IPC分类号： H01L21/28 ,  H01L21/31

CPC分类号： H01L21/31654 ,  H01L21/02233 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/28282

摘要： A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface region to a wet cleaning process to remove a native oxide layer from the surface region. In a specific embodiment, the method includes subjecting the surface region to an oxygen bearing environment and subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 10 milli-seconds to increase a temperature of the surface region to greater than 1000 Degrees Celsius. In a specific embodiment, the method causes formation of an oxide layer having a thickness of less than 10 Angstroms. In a preferred embodiment, the oxide layer is substantially free from pinholes and other imperfections. In a specific embodiment, the oxide layer is a gate oxide layer.

摘要翻译： 一种制造半导体器件的方法，例如SONOS电池。 该方法包括提供具有自然氧化物层的具有表面区域的半导体衬底（例如，硅晶片，绝缘体上硅）。 该方法包括将表面区域处理为湿清洗工艺以从表面区域去除自然氧化物层。 在一个具体实施方案中，该方法包括使表面区域承受含氧环境，并使表面区域经受波长为约300至约800纳米的高能电磁辐射，持续时间小于10毫秒至 将表面区域的温度增加到大于1000摄氏度。 在一个具体实施方案中，该方法导致形成厚度小于10埃的氧化物层。 在优选实施例中，氧化物层基本上没有针孔和其它缺陷。 在具体实施方案中，氧化物层是栅极氧化物层。