公开(公告)号：US07535069B2

公开(公告)日：2009-05-19

申请号：US11452741

申请日：2006-06-14

申请人： David W. Abraham ,  Stephen L. Brown ,  Stuart P. Parkin ,  Daniel Worledge

发明人： David W. Abraham ,  Stephen L. Brown ,  Stuart P. Parkin ,  Daniel Worledge

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： G11C11/16

摘要： A semiconductor device formed between a wordline and a bitline comprises a growth layer, an antiferromagnetic layer formed on the growth layer, a pinned layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, and a free layer formed on the tunnel barrier. The wordline and bitline are arranged substantially orthogonal to one another. The growth layer, in turn, comprises tantalum and has a thickness greater than about 75 Angstroms. Moreover, the pinned layer comprises one or more pinned ferromagnetic sublayers. The tunnel barrier comprises magnesium oxide. Finally, the free layer comprises two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline. The semiconductor device may comprise, for example, a magnetic tunnel junction for use in magnetoresistive random access memory (MRAM) circuitry.

摘要翻译： 形成在字线和位线之间的半导体器件包括生长层，形成在生长层上的反铁磁层，形成在反铁磁性层上的被钉扎层，形成在钉扎层上的隧道势垒层，以及形成在该引线层上的自由层 隧道屏障。 字线和位线彼此基本正交地布置。 生长层又包括钽，其厚度大于约75埃。 此外，被钉扎层包括一个或多个钉扎铁磁子层。 隧道势垒包括氧化镁。 最后，自由层包括两个或更多个自由铁磁子层，每个自由铁磁子层具有与字线和位线约45度的磁各向异性轴。 半导体器件可以包括例如用于磁阻随机存取存储器（MRAM）电路中的磁性隧道结。