公开(公告)号：US07413988B1

公开(公告)日：2008-08-19

申请号：US10607606

申请日：2003-06-27

申请人： Ramesh Gopalan ,  Sridharan Srivatsan ,  Katgenhalli Y. Ramanujam ,  Tom Ni ,  Conan Chiang

发明人： Ramesh Gopalan ,  Sridharan Srivatsan ,  Katgenhalli Y. Ramanujam ,  Tom Ni ,  Conan Chiang

IPC分类号： H01L21/302

CPC分类号： H01L21/7684 ,  H01L22/20

摘要： A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

摘要翻译： 提供了一种用于平面化半导体衬底的方法。 该方法通过跟踪对应于设置在半导体衬底上的导电膜的厚度的信号来启动。 然后，从表示跟踪信号的数据计算二阶导数。 接下来，基于二次导数的变化来识别平面化的开始。 还提供了被配置为识别CMP操作的阶段之间的转变的CMP系统。

公开(公告)号：US06896586B2

公开(公告)日：2005-05-24

申请号：US10112628

申请日：2002-03-29

申请人： Xuyen Pham ,  Tuan Nguyen ,  Ren Zhou ,  David Wei ,  Linda Jiang ,  Katgenhalli Y. Ramanujam ,  Joseph P. Simon ,  Tony Luong ,  Sridharan Srivatsan ,  Anjun Jerry Jin

发明人： Xuyen Pham ,  Tuan Nguyen ,  Ren Zhou ,  David Wei ,  Linda Jiang ,  Katgenhalli Y. Ramanujam ,  Joseph P. Simon ,  Tony Luong ,  Sridharan Srivatsan ,  Anjun Jerry Jin

IPC分类号： B24B21/10 ,  B24B37/12 ,  B24B49/14 ,  H01L21/304 ,  B24B49/00

CPC分类号： B24B37/12 ,  B24B21/10 ,  B24B49/14

摘要： A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

摘要翻译： 提供了一种用于具有线性抛光带的化学机械平面化（CMP）系统的温度控制系统，能够在线性抛光带上的准备位置上施加基底的载体。 温度控制系统包括具有多个区域的压板。 温度控制系统还包括配置的温度传感器，其确定在准备位置之后的位置处的线性抛光带的温度。 该系统还包括控制器，用于响应于从温度传感器接收到的输出，调节调节温度的流体流到压板的多个区域中的选定区域。

公开(公告)号：US07040952B1

公开(公告)日：2006-05-09

申请号：US10186912

申请日：2002-06-28

申请人： Sridharan Srivatsan ,  Ramesh Gopalan ,  K. Y. Ramanujam

发明人： Sridharan Srivatsan ,  Ramesh Gopalan ,  K. Y. Ramanujam

IPC分类号： B24B49/00

CPC分类号： B24B57/02 ,  B24B21/04 ,  B24B37/042

摘要： A method for preventing de-lamination of semiconductor wafer film stacks during a linear belt-type chemical mechanical planarization (CMP) process is provided. The method implements a pulsed polishing head rotation during a CMP process to maintain a slurry distribution across the width of a belt pad. The slurry distribution is maintained in a manner that prevents de-lamination of a wafer film having weak adhesion characteristics. Thus, the pulsed polishing head rotation implemented by the method reduces de-lamination of low-K material film layers during the CMP process.

摘要翻译： 提供了一种用于在线性带式化学机械平面化（CMP）工艺期间防止半导体晶片膜堆叠的分层的方法。 该方法在CMP工艺期间实现脉冲抛光头旋转，以保持浆带分布跨过带垫的宽度。 浆料分布以防止具有弱粘附特性的晶片膜的去层压的方式保持。 因此，通过该方法实现的脉冲抛光头旋转在CMP工艺期间减少了低K材料膜层的去层压。

公开(公告)号：US07690966B1

公开(公告)日：2010-04-06

申请号：US12177067

申请日：2008-07-21

申请人： Ramesh Gopalan ,  Sridharan Srivatsan ,  Katgenhalli Y. Ramanujam ,  Tom Ni ,  Conan Chiang

发明人： Ramesh Gopalan ,  Sridharan Srivatsan ,  Katgenhalli Y. Ramanujam ,  Tom Ni ,  Conan Chiang

IPC分类号： B24B49/00

CPC分类号： H01L21/7684 ,  H01L22/20

摘要： A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

摘要翻译： 提供了一种用于平面化半导体衬底的方法。 该方法通过跟踪对应于设置在半导体衬底上的导电膜的厚度的信号来启动。 然后，从表示跟踪信号的数据计算二阶导数。 接下来，基于二次导数的变化来识别平面化的开始。 还提供了被配置为识别CMP操作的阶段之间的转变的CMP系统。

公开(公告)号：US20090068767A1

公开(公告)日：2009-03-12

申请号：US11854038

申请日：2007-09-12

申请人： Stephen Sirard ,  Mikio Nagai ,  Kenji Takeshita ,  Sridharan Srivatsan ,  Jungmin Ko

发明人： Stephen Sirard ,  Mikio Nagai ,  Kenji Takeshita ,  Sridharan Srivatsan ,  Jungmin Ko

IPC分类号： H01L21/00

CPC分类号： H01L21/76804 ,  H01L21/76807 ,  H01L22/12 ,  H01L22/20

摘要： A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.

摘要翻译： 提供了一种设计蚀刻配方的方法。 执行蚀刻，包括提供具有设定的卤素与碳的比例的蚀刻气体，从蚀刻气体形成等离子体，以及蚀刻通过过孔的沟槽。 测量通过面。 卤素与碳的比例根据测量的通孔面重置，其中如果测量太多的小面积，则卤素与碳的比例将增加，并且如果测量的面积太小，则卤素与碳的比率降低。 重复前面的步骤，直到获得所需的刻面数量。

公开(公告)号：US06475332B1

公开(公告)日：2002-11-05

申请号：US09684028

申请日：2000-10-05

申请人： John Boyd ,  Katgenahalli Y. Ramanujam ,  Sridharan Srivatsan ,  Xuyen Pham

发明人： John Boyd ,  Katgenahalli Y. Ramanujam ,  Sridharan Srivatsan ,  Xuyen Pham

IPC分类号： B24D1100

CPC分类号： B24B37/26 ,  B24B21/04 ,  B24B47/00

摘要： An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polishing belt that is in contact with the interlocking belt. The polishing belt has a plurality of polishing belt stud holes, each configured to interlock with an upper stud end.

摘要翻译： 公开了一种互锁的抛光带装置。 互锁抛光带装置包括互锁带，其包括多个螺柱，每个螺柱具有上螺柱端部和下螺柱端部。 此外，互锁抛光带装置包括与互锁带接触的研磨带。 抛光带具有多个抛光带螺栓孔，每个抛光带螺栓孔被构造成与上螺柱端部互锁。