公开(公告)号：US20070015301A1

公开(公告)日：2007-01-18

申请号：US11182310

申请日：2005-07-14

申请人： David Wen ,  Xinqiao Liu ,  Ahn Vu ,  Steven Onishi

发明人： David Wen ,  Xinqiao Liu ,  Ahn Vu ,  Steven Onishi

IPC分类号： H01L21/00

CPC分类号： H01L27/14812 ,  H01L27/14837 ,  H01L31/03529

摘要： A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

摘要翻译： 公开了一种在第一和第二电极之间具有光转换元件的光传感器。 光转换元件包括具有第一和第二表面的半导体材料体。 半导体材料的主体是第一导电类型，并且具有浓度梯度的掺杂元素，其产生具有从第一表面到第二表面单调变化的幅度的第一静电场。 偏置电路在第一和第二电极之间施加可变电位以产生具有与第一静电场的方向相反的方向的第二静电场和由电位确定的幅度。 其中一个电极对于预定波段的光是透明的。 半导体材料的主体可以包括外延体，其具有作为距离一个表面的距离的函数的单调递增的掺杂元素的浓度。